Allicdata Part #: | DTC124EM3T5GOSTR-ND |
Manufacturer Part#: |
DTC124EM3T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 260MW SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC124EM3T5G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
Base Part Number: | DTC124 |
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DTC124EM3T5G is a pre-biased dual NPN transistor chip developed by ON Semiconductor. It is designed to be used in a wide variety of low-power electronic applications, such as automotive, consumer, communications and computing applications. This component is specified for up to 3.5A collector current and has a very low Rce saturation voltage of only 0.15V.
The DTC124EM3T5G is a single pre-biased bipolar junction transistor (BJT). A transistor is a semiconductor device consisting of three layers of semiconductor material that are arranged in an alternating pattern. The alternating layers form two junctions, one called the base-emitter junction and the other the collector-emitter junction. These junctions are the active regions of the transistor, which allow the device to control IC current.
The DTC124EM3T5G is a two-transistor component in which one transistor is mutually biased. This means that one transistor is connected to make the base-emitter and collector-emitter junctions of the other transistor conductive. This helps to reduce power consumption and overall component size.
The main difference between a pre-biased transistor and an ordinary transistor is that the collector-emitter voltage is higher, which allows it to switch faster and more effectively. This is especially useful in applications where switching speed is a critical factor, such as in automotive sensors, consumer electronics and communications. The DTC124EM3T5G is capable of switching speeds up to 1.3GHz.
The DTC124EM3T5G has a variety of features that make it an ideal choice for a wide range of applications, including a maximum collector-emitter voltage of 36V, an operating temperature range of -55°C to +150°C and a maximum power dissipation of 1.8W. Its small size and low power consumption makes it an efficient choice for an array of applications.
The working principle of a pre-biased transistor is simple and follows the same principles as a standard transistor. When a voltage is applied to the base, current flows from the emitter to the collector. This flow produces an amplified current, which is used to switch electronic devices on or off and control the flow of current. This type of device makes it easy to quickly control circuits using a small amount of power, making it an ideal choice for a wide range of applications.
In conclusion, the DTC124EM3T5G is a pre-biased single NPN transistor designed to meet the needs of a wide array of applications. This device offers low power consumption, high switching speed and a variety of features that make it an ideal choice for consumer, automotive, communications and computing applications. The pre-biased feature allows for faster switching speeds than ordinary transistors, making it an effective choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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