MMUN2211LT1G Allicdata Electronics

MMUN2211LT1G Discrete Semiconductor Products

Allicdata Part #:

MMUN2211LT1GOSTR-ND

Manufacturer Part#:

MMUN2211LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 246MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: MMUN2211LT1G datasheetMMUN2211LT1G Datasheet/PDF
Quantity: 862
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 862Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMUN22**L
Description

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MMUN2211LT1G Transistors are a type of Bipolar (BJT) Single, Pre-Biased transistors. These transistors are designed for use in high-efficiency, high-current applications and feature a built-in base resistor to provide a predetermined current bias. These transistors are ideal for use in high-voltage switching applications, where the current needs to be precisely controlled in order to avoid overvoltage and thermal run away.The MMUN2211LT1G transistors are made from an insulation-gap material and feature a low threshold voltage. This allows them to be used in applications where a relatively low base current is required for transistor turn on. This makes them ideal for use in applications where the base current must be precisely controlled in order to obtain a desired operating point.The low forward voltage drop of these transistors, combined with the pre-biased base resistor, make them well suited for high-efficiency, high-current switching applications. The transistors have a base-emitter voltage of 6V, a collector-emitter voltage of 80V and a maximum current rating of 5A. These transistors are rated to withstand up to 100V reverse current without damage.The MMUN2211LT1G transistors can be used in a wide variety of applications. Examples include DC-DC converters, solar inverters, H-bridges, power supplies and other power electronics applications. They offer long life and high reliability thanks to their robust construction and insulation-gap material. These transistors also feature low power loss and low noise levels, making them good choices for noise sensitive applications.The working principle of the MMUN2211LT1G transistor is relatively straightforward. When the base current is applied, it causes a small current to flow between the base and the emitter terminals. This current causes the transistor to turn on, allowing current to flow from the collector to the emitter. The output current will be proportional to the base current, providing precise current control.In summary, the MMUN2211LT1G transistors are an ideal choice for high-current switching applications. They feature an insulation-gap construction, a low threshold voltage, a low forward voltage drop and a pre-biased base resistor. This makes them well suited for high-efficiency, high-current applications where precise current control is required. The devices are robust and reliable, while also offering low power loss and low noise levels.

The specific data is subject to PDF, and the above content is for reference

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