Allicdata Part #: | PDTD123TK,115-ND |
Manufacturer Part#: |
PDTD123TK,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 250MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD123TK,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3; MPAK |
Base Part Number: | PDTD123 |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
The PDTD123TK,115 is a single, pre-biased, NPN bipolar junction transistor (BJT) designed for switching application in high-performance circuit designs. This type of transistor is one of the most common types of transistors in use today, due to their good speed, low power consumption and rugged construction. This type of transistor is also relatively simple to use and allows for a variety of circuit designs.
The PDTD123TK,115 has two distinct application fields. First, it can be used for switching applications, such as in a relay circuit. The transistor is used to switch between high and low voltage outputs, allowing for the desired voltage to be applied to the load, whether it is in the form of a motor, solenoid or relay. Second, the PDTD123TK,115 can also be used for amplification purposes. This type of transistor is capable of amplifying an incoming signal, allowing for high-performance audio or video circuits to be constructed.
The working principle of the PDTD123TK,115 is simple. When the base or emitter voltage rises, the flow of current between the emitter and collector increases, due to the increase in potential difference between the two. This then causes the output to rise at the collector. Conversely, when the base or emitter voltage drops, the flow of current reduces, resulting in a reduction in the output voltage at the collector.
To use the PDTD123TK,115 in a circuit, it must first be connected correctly. The main voltage source must be connected to the collector and base, and a resistor should be connected between the two. This resistor acts as a load, allowing current to pass through the transistor and increase the current gain. The emitter should also be connected to ground, completing the circuit. Once the transistor is correctly connected, it can be used to control the flow of current from the collector to the load.
In summary, the PDTD123TK,115 is a single, pre-biased, NPN bipolar junction transistor designed for switching and amplification applications. The principle of its operation is based on the change in potential difference between the emitter and collector when the base or emitter voltage is changed, allowing for current to flow to the load. The transistor must be correctly connected in the circuit, with a resistor acting as a load, in order for it to function correctly.
The specific data is subject to PDF, and the above content is for reference
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