Allicdata Part #: | PDTD123YS,126-ND |
Manufacturer Part#: |
PDTD123YS,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 500MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTD123YS,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PDTD123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A single pre-biased PDTD123YS,126 are an example of a bipolar junction transistor (BJT) that produces an effect based upon the amount of voltage applied. Essentially, they are three-terminal, solid-state devices containing two p-type and n-type semiconductor regions. It is this combination that enables it to have the features that make it incredibly reliable and useful.
The three terminals of the PDTD123YS,126 are the emitter, base and collector. The emitter is the most positive region, the base is the middle or neutral region and the collector is the most negative region. The amount of voltage applied to the PDTD123YS,126 determines the current flow across the transistor, which can be measured at the collector. As the voltage applied to the base increases, more electrons are pulled from the emitter region to the collector and subsequently this results in an increase of current in the collector.
The PDTD123YS,126 is often used in circuits that require either an on/off signal or an amplification for a signal. In general, transistors offer a much higher gain than a simple switch could, and are sensitive to minute differences in voltage levels. This makes it ideal for signal conditioning, signal switching and signal amplification.
The PDTD123YS,126 is also often used in circuits that require fast switching. This is due to the fact that they have a very low input capacitance between the base and emitter, which results in a fast switching response time. This low input capacitance also helps to reduce power consumption when used in high-speed applications.
Another common application for the PDTD123YS,126 is power control. It features an extremely low voltage drop due to its high saturation voltage. This makes it particularly suited for applications where power consumption must be minimized in order to conserve battery life. It can also be used in circuits that require a low dropout voltage, such as in field-programmable gate arrays (FPGAs).
Due to their resistance to various environmental factors such as temperature and humidity, the PDTD123YS,126 is also often used in industrial settings. It is for this reason that it is one of the most popular transistors for industrial applications. It can handle large temperature ranges, as well as being able to handle high levels of variations in voltage.
The PDTD123YS,126 is a reliable and useful transistor for a wide range of applications and is an important component for industrial and consumer electronics. With its wide range of uses, it has become the go-to transistor for many engineers and electronics enthusiasts. Its low input capacitance, high gain, and fast switching response time make it a very versatile device.
The specific data is subject to PDF, and the above content is for reference
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