Allicdata Part #: | LN60A01ES-LF-Z-ND |
Manufacturer Part#: |
LN60A01ES-LF-Z |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Monolithic Power Systems Inc. |
Short Description: | MOSFET 3N-CH 600V 0.08A 8SOIC |
More Detail: | Mosfet Array 3 N-Channel, Common Gate 600V 80mA 1.... |
DataSheet: | LN60A01ES-LF-Z Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.39051 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 3 N-Channel, Common Gate |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 80mA |
Rds On (Max) @ Id, Vgs: | 190 Ohm @ 10mA, 10V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.3W |
Operating Temperature: | -20°C ~ 125°C (TJ) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The LN60A01ES-LF-Z is part of the family of N-Channel MOSFET arrays. These FETs are characterized by their ability to be used in high speed switching applications.
The LN60A01ES-LF-Z is designed for use in telecom, office automation, military and aerospace applications. It is made from an optimised silicon process and features an easily accessible 4-port connection for easy connection to the system power rails.
The device itself comprises of two separate arrays. Each array contains three N-channel MOSFETs solved in one package. Each of the transistors has an individual gate and drain connection. This enables the user to use the array in many different configurations, depending on the application.
The overall working principle of the LN60A01ES-LF-Z is that it acts as a 4-port switch. When a voltage is brought to the gate, it turns on the flow of electric current through the transistor array. Depending on the configuration the user has chosen, this current can be used to turn on or off a signal or drive a signal up and down to different voltages.
The key features of the LN60A01ES-LF-Z include low input capacitance and leakage current, high speed switching and a low on-resistance, as well as a wide range of voltage and temperature control. This FET can be used in applications that require low power with high precision and excellent signal-processing capabilities.
The LN60A01ES-LF-Z array is highly versatile and can be used in many different applications, such as RF receivers, amplifiers, and power management, to name a few.
The MOSFET array has many advantages over other types of FETs. Its low on-resistance and low input capacitance makes it ideal for high-speed switching applications where precision and low power are key. Additionally, the device can be used with a wide range of temperatures and voltages, providing a higher level of flexibility.
In summary, the LN60A01ES-LF-Z is a N-channel MOSFET array that is designed for use in a variety of applications. Its 4-port connections make it incredibly easy to integrate into a system, while its low on-resistance and low input capacitance make it ideal for high-speed switching. The device also features excellent signal-processing capabilities, making it a great option for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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