CE3512K2-C1 Discrete Semiconductor Products

The CE3512K2-C1 is an RF transistor designed for enhanced linearity, high frequency performance and high light load sensitivity. It is part of CEL\'s small-signal transistor family and is well suited to cost-sensitive applications in the industrial consumer market.

The CE3512K2-C1 belongs to the field effect transistors (FETs) category of transistors. FET transistors are used in a variety of applications and have been widely utilized for radio-frequency (RF) circuits due to their excellent linearity, high frequency performance and high light load sensitivity characteristics. What distinguishes FETs from other transistors is the fact that the electrical properties of the transistor are controlled by the electrical charge of the gate electrode. In contrast, the output of a bipolar junction transistor (BJT) is controlled by the current flowing into the base terminal.

The CE3512K2-C1 is a metal-oxide-semiconductor FET (MOSFET), which offers superior switching performance, low power dissipation and low voltage operation. It is designed to operate within the VHF, UHF and microwave frequency bands, making it a great choice for high-frequency and efficient applications. The CE3512K2-C1 can handle up to 10W of power and is capable of frequency synthesizer and oscillator circuits.

Working principle: The CE3512K2-C1 is a MOSFET transistor with a P-channel design. It works following the traditional field-effect transistor (FET) operation principle with a gate terminal, source and drain leads.

The CE3512K2-C1 has a drain region and a source region, separated by the channel. An applied voltage to the gate region opens or closes the channel and allows charge carriers (electrons or holes) to flow between the drain and source regions. This current regulates the operation of the device, allowing for better control and increased efficiency in the overall circuit.

The gate voltage controls the channel resistance, also known as the drain-source resistance, which influences the amount of current that can pass through the device. As such, varying the voltage on the gate can modulate the current flow, allowing the device to serve as an amplifier, oscillator, switch or other functions as needed.

Applications: The CE3512K2-C1 MOSFET is an excellent choice for RF applications such as remote control transmitters, receivers, antennas and power amplifiers. It is also ideal for frequency synthesizers and motor control. The device is well suited to cost-sensitive applications in the industrial consumer market.

Conclusion: The CE3512K2-C1 is a MOSFET transistor with exceptional linearity and high frequency performance characteristics for P-Channel RF applications. It is suitable for a wide range of applications in the industrial consumer market and is ideal for frequency synthesizers, oscillators and more.