CE3512K2

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The CE3512K2 is a NMOS field effect transistor (FET) for use in radio frequency (RF) applications. Ideal for use in Class-E power amplifiers, this device has a maximum output power of 50W, making it suitable for applications such as WiMAX, LTE, and CDMA base station amplifiers. It has low on-resistance, a low thermal resistance, and is integrated on a 6-layer built-in package.

The CE3512K2 consists of four silicon MOSFET transistors connected together as a Darlington. It has two source connections, two drain connections, and one gate lead. The FET operates in three distinct modes; depletion mode, enhancement mode, and overload mode. The depletion mode is characterized by its normally off design and is used in saturated switching circuits. The enhancement mode, on the other hand, is used in linear amplifier designs and is characterized by its normally on design. In overload mode, the FET is used in amplifiers to limit the amount of input power, keeping devices from being damaged.

For RF applications, the CE3512K2 has a high frequency performance advantage due to its low switching speed. With a maximum frequency range of 10GHz and a maximum noise figure of 2dB, the device delivers excellent signal-handling performance up to a wide range of frequencies. It also has a low threshold voltage of 1.5V and a maximum power dissipation of 1W.

Using an optimized Gallium-Arsenide wafer process, the CE3512K2 transistor delivers excellent breakdown voltage characteristics and an on-resistance of only 50mΩ. The low thermal resistance of the device enables it to keep thermal rise and power dissipation to a minimum while operating in high power demanding environments and ensures long product life. It also has a small footprint that makes it ideal for space constrained and power limited applications.

The CE3512K2 NMOS field effect transistor is a high performance device designed for use in RF applications and has good linearity performance and excellent thermal characteristics. Its low on-resistance, enhanced noise figure, and high frequency response make it ideal for applications such as WiMAX, LTE and CDMA base station amplifiers, low to medium power radios, and high-power amplifiers up to 50W. The integration of the device on a 6-layer built-in package reduces the complexity of the design and makes it suitable for a range of cost-sensitive applications.

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