CE3514M4-C2 Discrete Semiconductor Products

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The CE3514M4-C2 is an RF MOSFET transistor and a key component in any RF system built for commercial, industrial and military applications. When compared to regular MOSFETs and field-effect transistors (FETs), RF MOSFETs deliver smaller size and higher efficiency, making them the ideal solution for RF applications.

RF MOSFETs, such as the CE3514M4-C2, have a wide variety of applications when it comes to radio communication systems and other electronic devices. These applications include high-power, high-efficiency switching, high-frequency amplification, pulse shaping, baseband modulation and other complex, multi-stage circuitry operations. Additionally, RF MOSFETs are often used in RF power amplifiers, which are used to boost the signal power of a particular frequency. These amplifiers are mainly applied in mobile communications, wireless local area networks (WLANs), GPS, ultra-wideband (UWB) and wireless personal area networks (WPANs).

The CE3514M4-C2 is a N-channel MOSFET and makes use of a voltage for controlling the output current. It operates at a drain source voltage ranging from 8 volts to 28 volts and a maximum drain current of 0.7 amperes. It has a minimum drain saturation voltage drop of 1 volt and a maximum power dissipation of 2 watts. The device\'s maximum drain to source capacitance is 4.7 pF. Other noteworthy features of the CE3514M4-C2 include a drain to source breakdown voltage of 28 volts and an on-state resistance of 3.8 ohms.

The CE3514M4-C2 is designed to operate in a particular voltage range, usually 200 millivolts to 28 volts. Within this range, the output current remains proportional to the input voltage. This is referred to as linear operation. When the input voltage crosses the linear range of operation, the device enters a region referred to as the "saturation region". In this region, the output current is not proportional to the input voltage and the device works more like a switch than an amplifier.

When it comes to working principle, the CE3514M4-C2 works like any other MOSFET. It consists of four terminals – gate, drain, source and body. The gate terminal controls the flow of electrons from the source to the drain. The body terminal is used to connect the transistor to ground. When a voltage is applied to the gate terminal, it creates a special channel between the source and drain terminals, allowing the electrons to flow. The size of this channel is determined by the voltage applied to the gate terminal, which in turn determines the current flowing through the transistor.

Overall, the CE3514M4-C2 is a great choice for RF applications in commercial, military, and industrial settings. It is a very reliable device and has a low on-state resistance, making it an efficient choice for high-power, high-frequency operation. Its wide range of applications, simple working principle and impressive specs make it an attractive option for any RF system.

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