CE3514M4

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CE3514M4 is an advanced Radio Frequency (RF) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) developed by Mitsubishi Electric Corporation. It has a single N-Channel depletion-mode RF MOSFET with low on-resistance, high peak current capability, and wide operating frequency range, making it the ideal device for various applications requiring high-performance, low distortion switching and amplification, such as mobile phones and wireless LAN applications. 

As a depletion-mode MOSFET, CE3514M4 has an internal electric field which creates an inversion layer between the source and drain electrodes and is designed to be "ON" when no voltage is applied to the gate. In its OFF state, no current flows through the MOSFET; in its ON state, current can flow through the device when voltage is applied to its gate. 

In terms of performance, CE3514M4 offers very low on-resistance (Ro) across the operating temperature range and high peak current capability. With a breakdown voltage at 5V and a maximum drain-source voltage (VDS) of 20V, it is suitable for applications that require high voltage and low-level signals, such as mobile phones and wireless LANs. It also has an operating frequency range of 10 MHz to 4 GHz, making it suitable for a wide range of applications. 

In terms of applications, CE3514M4 is particularly suitable for radio communication applications. It is highly suitable for use in low-distortion switching and amplification circuits for mobile phones, radar systems, automotive surveillance systems, and wireless LANs. It can also be used as switch for power amplifiers, transmitters, receivers, and other radio communication devices. 

In terms of working principle, CE3514M4 uses a unique MOSFET technology to achieve its high performance. Firstly, it utilizes a low-threshold voltage (Vth) and gate-drain capacitance (Cdg) structure to reduce on-resistance and improve frequency response. Secondly, it has an optimized structure to reduce gate-source capacitance (Cgs) and body-drain capacitance (Cdb) to minimize voltage distortion. Lastly, it utilizes a surface passivation process to reduce gate-source-drain capacitance (Cgds) and improve power efficiency. 

Overall, CE3514M4 provides an ideal RF switch and amplifier solution for high-performance radio frequency applications that require low distortion and high peak current capabilities. It is particularly suitable for mobile phones and wireless LANs, and performs especially well when used in low-distortion switching and amplification circuits. 

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