CE3520K3-C1 Discrete Semiconductor Products |
|
Allicdata Part #: | CE3520K3-C1TR-ND |
Manufacturer Part#: |
CE3520K3-C1 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF FET 4V 20GHZ 4MICROX |
More Detail: | RF Mosfet pHEMT FET 2V 10mA 20GHz 13.8dB 125mW 4-M... |
DataSheet: | CE3520K3-C1 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.39375 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | pHEMT FET |
Frequency: | 20GHz |
Gain: | 13.8dB |
Voltage - Test: | 2V |
Current Rating: | 15mA |
Noise Figure: | 0.8dB |
Current - Test: | 10mA |
Power - Output: | 125mW |
Voltage - Rated: | 4V |
Package / Case: | 4-Micro-X |
Supplier Device Package: | 4-Micro-X |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CE3520K3-C1 is a type of Field Effect Transistor (FET), more specifically a Metal Oxide Semiconductor FET (MOSFET), that is designed to perform at radio-frequency (RF) applications. In RF applications, FETs are typically operated as amplifiers, switches or oscillators, and offer superior performance when compared to other electronic components such as bipolar junction transistors or vacuum tubes.
The CE3520K3-C1 MOSFET is specifically designed for use in RF applications. It has a rated frequency of 2 GHz, and is capable of producing up to 8 Watts of output power. In addition, the device has a low on-state resistance, meaning it has a low voltage drop when operating. This allows for high efficiency in power conversion, which is important in RF applications.
The CE3520K3-C1 is constructed using a phenomenon known as “field effect”. In FETs, the electric field established between the body and the gate terminals controls the current flow through the device. The CE3520K3-C1 has an N-type body and a P-type gate, meaning that when a positive voltage is applied to the gate terminal, a “depletion region” forms between the two terminals, allowing current to flow through the device.
The depletion region is created by holes at the interface between the gate and body terminals. These holes are referred to as “dopants”. The dopants are placed in a very precise manner in order to create the desired electric field distribution and enable the FET to accurately control current flow.
The CE3520K3-C1 also features gate protection, which guards the FET against voltage or current overloads. This is important for RF applications, as a voltage or current overload can easily damage the FET and reduce its performance.
Overall, the CE3520K3-C1 is an excellent choice for RF applications. Its low on-state resistance, precise doping, and gate protection make it well suited for use in a range of high frequency applications. This makes it an ideal choice for applications that require precise control of current and voltage, or those that require high power efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HLMP-CE35-Y1CDD | Broadcom Lim... | 0.0 $ | 1000 | LED CYAN CLEAR 5MM ROUND ... |
HLMP-CE35-Y1QDD | Broadcom Lim... | 0.0 $ | 1000 | LED CYAN CLEAR 5MM ROUND ... |
CE3514M4-C2 | CEL | 0.22 $ | 1000 | RF MOSFET PHEMT FET 2V SO... |
CE3512K2 | CEL | 1.02 $ | 3144 | RF FET 4V 12GHZ 4MICROXRF... |
CE3512K2-C1 | CEL | 0.29 $ | 1000 | RF FET 4V 12GHZ 4MICROXRF... |
CE3521M4-C2 | CEL | 0.35 $ | 1000 | RF FET 4V 20GHZ SOT343RF ... |
CE3520K3-C1 | CEL | 0.43 $ | 1000 | RF FET 4V 20GHZ 4MICROXRF... |
CE3514M4 | CEL | 0.81 $ | 442 | RF FET 4V 12GHZ SOT343RF ... |
CE3521M4 | CEL | 1.11 $ | 953 | RF FET 4V 20GHZ SOT343RF ... |
CE3520K3 | CEL | 1.4 $ | 452 | RF FET 4V 20GHZ 4MICROXRF... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...