CE3521M4-C2 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	pHEMT FET
Frequency:	20GHz
Gain:	11.9dB
Voltage - Test:	2V
Current Rating:	15mA
Noise Figure:	1.05dB
Current - Test:	10mA
Power - Output:	125mW
Voltage - Rated:	4V
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	4-Super Mini Mold

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electronic applications have become increasingly important in today’s technological world. everything from the television in your living room, to the computer you use at work rely on electronic components. among these, transistors and their derivatives, such as field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), are essential components that are used to design and manufacture a variety of electronic products.one of the most important FETs and MOSFETs on the market is the CE3521M4-C2, which is designed for radio frequency (RF) applications. this device is designed to be used in a variety of applications and environments, from consumer electronics and portable devices, to automotive and industrial applications.the CE3521M4-C2 is an FET and MOSFET that operates at RF frequencies. it is capable of handling input frequencies between 0.1 to 1.3 GHz and output power levels of up to 50W. the device has a high current rating of 60 A, with a maximum dissipation power of 350 W, making it suitable for a variety of applications. in addition, it is able to withstand a continuous voltage of 5V, making it suitable for high voltage operation.the CE3521M4-C2 uses a depletion-mode MOSFET as its main component, which allows it to operate as an FET and MOSFET simultaneously. this type of FET/MOSFET has a number of advantages, such as exceptional linearity and gain, as well as excellent noise suppression characteristics. it is also able to operate in high temperature environments, making it suitable for a variety of industrial applications.the CE3521M4-C2 can be used in a variety of RF applications, including low-noise amplifiers, high-efficiency power amplifiers, and RF mixers/upconverters. although the device is capable of handling high power levels and operating at temperatures up to 150°C, it is important to note that it can be highly susceptible to being damaged in certain conditions. it is recommended that the device be used in a well-ventilated area in order to reduce the chances of damage.in conclusion, the CE3521M4-C2 is an important FET and MOSFET device for use in RF applications. its ability to operate with high power levels and in harsh environments make it well suited for a variety of industrial and consumer applications. however, it is important to keep in mind that this device can be easily damaged in certain conditions, so it is important to use proper protective measures when operating the device.

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