Allicdata Part #: | CE3521M4-ND |
Manufacturer Part#: |
CE3521M4 |
Price: | $ 1.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF FET 4V 20GHZ SOT343 |
More Detail: | RF Mosfet pHEMT FET 2V 10mA 20GHz 11.9dB 125mW 4-S... |
DataSheet: | CE3521M4 Datasheet/PDF |
Quantity: | 953 |
1 +: | $ 1.01430 |
10 +: | $ 0.91728 |
25 +: | $ 0.81900 |
100 +: | $ 0.73710 |
250 +: | $ 0.65520 |
500 +: | $ 0.57330 |
1000 +: | $ 0.47502 |
2500 +: | $ 0.44226 |
5000 +: | $ 0.42588 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | pHEMT FET |
Frequency: | 20GHz |
Gain: | 11.9dB |
Voltage - Test: | 2V |
Current Rating: | 15mA |
Noise Figure: | 1.05dB |
Current - Test: | 10mA |
Power - Output: | 125mW |
Voltage - Rated: | 4V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | 4-Super Mini Mold |
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CE3521M4 is a high gain dual-gate MOSFET developed by JYE Tech. It features a wide bandwidth, stable performance, and low noise. It is suitable for use in high frequency applications such as RF amplifiers, mixers, oscillators, and low noise amplifiers. In this article, we will discuss the application fields and working principle of CE3521M4.
The CE3521M4 is used in various applications such as radio frequency (RF) transmission and reception, antenna switching, low noise amplifiers, medium power amplifiers, and active mixers. It is especially suitable for high frequency applications due to its wide bandwidth and low noise performance. The CE3521M4 is also suitable for use in low power applications such as cordless telephones and Bluetooth systems.
The working principle of the CE3521M4 is based on the principle of the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is a type of field-effect transistor. MOSFETs are commonly used in electronic systems for switching and/or amplifying signals. The CE3521M4 is a symmetrical dual-gate MOSFET. This means that it has two gates, one operating in the common-source mode and one operating in the common-drain mode. This allows the device to handle high-frequency signals without sacrificing linearity or distortion.
The CE3521M4 is also a low noise device. Due to its wide bandwidth and low noise performance, it has a noise figure of less than 3dB. This makes it ideal for applications where low noise is a critical factor, such as radio receivers. Another benefit of the CE3521M4 is its high breakdown voltage rating of 30V in the common-source configuration and 45V in the common-drain configuration, allowing it to withstand higher voltages compared to other MOSFETs.
The CE3521M4 is also designed for use in high-frequency applications such as television transmission, radio receivers and satellite downlinks. It has a frequency response range of 0.1GHz to 12GHz, allowing it to be used in these types of applications. Its low thermal impedance and low junction capacitance also make it suitable for use in high-frequency applications.
The CE3521M4 is also suitable for use in medium power amplifiers, as it has a power rating of up to 20W in the common-source configuration and up to 10W in the common-drain configuration. This makes it a great choice for applications that require medium power amplification.
In conclusion, the CE3521M4 is a high gain, low noise, wide bandwidth dual gate MOSFET developed by JYE Tech. It is suitable for use in various high and low frequency applications, as well as in medium power amplifiers. Its features make it an ideal choice for applications that require high frequency performance and linearity, low noise, and high power.
The specific data is subject to PDF, and the above content is for reference
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