MRF21085LSR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF21085LSR3 is a 75 Volt N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for applications in the radio frequency range, such as radio transmitters, microwave communication, and ultra-wideband radio. It has a maximum drain-source breakdown voltage of 75 Volts and a maximum drain current of 12.5 Amps. The low profile SOIC (Small Outline Integrated Circuit) package is compatible with high density printed circuit boards (PCBs).

The MOSFET is an insulated-gate field-effect transistor (IGFET) with three terminals: the source, the drain, and the gate. The source is connected to the ground and the drain is connected to the power supply. The current flow through the device is regulated by the electric field applied to the gate terminal. Applying a positive voltage to the gate terminal will create a channel of low resistance between the source and the drain, allowing current to flow in the direction from the source to the drain. Applying a negative voltage to the gate terminal will reduce the width of the channel, thus reducing the current flow through the device.

The MRF21085LSR3 MOSFET is designed for radio frequency applications, so it is specially designed to achieve very low noise levels. This is achieved mainly by the use of a low resistance channel, which reduces the noise generated by the current flowing through the device. Additionally, the device features extremely fast switching times, which helps reduce interference with other frequency signals.

The MRF21085LSR3 is also designed for high power handling capability. It has a maximum power dissipation of 30 Watts, so it can handle large power levels without overheating. The device is also designed for low thermal impedance, which helps to reduce temperature rises in the device during high power applications.

The MRF21085LSR3 is a versatile device that can be used for many RF applications. It is suitable for radio transmitters, microwave communication, and ultra-wideband radio applications. It also has excellent power handling capability and low noise levels, making it suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference