MRF21085LSR5 Allicdata Electronics
Allicdata Part #:

MRF21085LSR5-ND

Manufacturer Part#:

MRF21085LSR5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 2.17GHZ NI-780S
More Detail: RF Mosfet LDMOS 28V 1A 2.11GHz ~ 2.17GHz 13.6dB 19...
DataSheet: MRF21085LSR5 datasheetMRF21085LSR5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.11GHz ~ 2.17GHz
Gain: 13.6dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1A
Power - Output: 19W
Voltage - Rated: 65V
Package / Case: NI-780S
Supplier Device Package: NI-780S
Description

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MRF21085LSR5 is a type of field effect transistor, specifically a silicon n-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single-pole, normally-off, low power field effect transistor, featuring a low profile, surface-mount package and a high input impedance. It is designed for portable and wireless applications that demand high power efficiency and reliability, such as RF circuit and WLAN networks.

The MRF21085LSR5 is a two-terminal device constructed of vertically stacked layers of Metal-Oxide-Semiconductor (MOS) barriers. MOSFETs are ideal for use in RF applications since they are low-capacitance devices and can switch rapidly. The MRF21085LSR5 provides a low on-resistance and superior switching characteristics, making it ideal for use in RF power amplifiers, RF receivers and transmitters, and WLAN radio applications. The device also features a built-in charge pump that can be enabled to boost the supply voltage or used for gate injection pulses.

The principle of operation for the MRF21085LSR5 is based on the concept of source and drain depletion regions. A voltage applied across the device’s gate and source creates an electric field which controls the current flow between the source and the drain. The larger the voltage applied to the gate, the larger the depletion region, and the smaller the current flow. When the voltage on the gate of the device is reduced, the depletion region reduces in size and the drain current increases. The device can also be turned on and off quickly by applying a small gate voltage pulse to the device\'s gate.

The MRF21085LSR5 is suitable for use in a wide variety of high frequency applications. It can be used in high power RF amplifiers, RF transceivers and WLAN networks. As a low voltage device, it can operate at much lower supply voltages than traditional FETs, making it ideal for battery powered applications. It is also a low profile device, making it ideal for use in compact, space-constrained applications. In addition, its low power capabilities make it suitable for use in energy efficient applications.

The MRF21085LSR5 is a versatile device, suitable for use in a wide variety of applications. Its low on-resistance and superior switching characteristics make it ideal for use in RF circuits and WLAN networks, and its low voltage capabilities make it ideal for use in battery powered applications. The device is also small enough to allow it to be used in compact and space-constrained applications, while still providing high efficiency and reliability. With its wide range of applications, the MRF21085LSR5 is an excellent choice for designers looking to optimize their designs.

The specific data is subject to PDF, and the above content is for reference

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