Allicdata Part #: | MRF24301HR5-ND |
Manufacturer Part#: |
MRF24301HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | 250W AF17 2450MHZ NI-780 |
More Detail: | RF Mosfet LDMOS 2.4GHz ~ 2.5GHz 13.5dB 300W NI-7... |
DataSheet: | MRF24301HR5 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.4GHz ~ 2.5GHz |
Gain: | 13.5dB |
Current Rating: | -- |
Noise Figure: | -- |
Power - Output: | 300W |
Package / Case: | SOT-957A |
Supplier Device Package: | NI-780H-2L |
Description
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MRF24301HR5 Application Field and Working Principle
MRF24301HR5, from Royal Philips Corporation, is a pHEMT class-AB high-linearity amplifier IC featuring monolithic GaAs technology for broadband wireless communication applications. The MRF24301HR5 IC has gained prominence beyond the traditional application field in radio frequency (RF) systems because of its wide-ranging and relatively high power output, making it a valuable component for network products such as base station amplifiers and wireless access points.The MRF24301HR5 has an integrated self-biasing, class-AB amplifier architecture. The amplifier architecture functions by providing an input signal with a certain amplitude and phase to the amplifier. The amplifier then applies a bias voltage to the source in order to set the class of operation (AB, C, etc.). When the amplifier is turned off, the input to the amplifier is disconnected from the output.The MRF24301HR5 features high linearity and low noise figures for frequency applications up to 6 GHz. Additionally, the amplifier features a wide bandwidth of operation allowing for frequency response beyond 6 GHz. The excellent power added efficiency (PAE) and power output enable application in various broadband communications. The MRF24301HR5 is also capable of working even in the presence of high input voltages.The amplifier is equipped with on-chip shunt tuneable capacitors that can be used to enhance the linearity. As these capacitors act as a low pass filter, the distortion caused by the amplifier is suppressed. Furthermore, the amplifier is equipped with a wide band RF doubler that improves the receiver sensitivity and system noise figure. The amplifier also features an integrated voltage-controlled oscillator (VCO) with a wide range of tuning signals. The VCO can operate on a wide range of frequency signals, making it suitable for input signals in the frequency range of 500 MHz to 6.5 GHz. In addition to the PHEMT class-AB amplifier architecture, the MRF24301HR5 also features a gain tracking function. The gain tracking function allows the amplifier to maintain a constant output level over a wide range of input amplitudes and frequencies. This feature can be used to control the linearity of the amplifier as well as reduce the unwanted noise generated by the amplifier. The MRF24301HR5 is suitable for use in various LTE and W-CDMA applications with higher data rates and improved efficiency. The amplifier features high gain with low noise, making it suitable for applications such as cellular basestations, wireless access points, and high linearity receivers. Furthermore, the on-chip tuning elements and the integrated VCO make it suitable for a variety of system design applications. Overall, the MRF24301HR5 offers a wide range of integration features for low power and low cost systems with improved performance and reliability. The amplifier is suitable for use in a wide range of applications, including those for radio frequency communication, cellular basestations, wireless access points and high linearity receivers. Thanks to its high linearity and low noise figures, the MRF24301HR5 can be used in applications requiring high power output, making it a valuable component for many RF systems.The specific data is subject to PDF, and the above content is for reference
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