MRF281ZR1

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RF MOSFETs are transistors that rely on metal-oxide-semiconductor technology and operate at radio-frequency ranges of 10 to 1000 MHz. Among them, the MRF281ZR1 is designed and manufactured specifically for radio-frequency amplifier applications, ranging from 10 to 1300 megahertz in frequency.

The MRF281ZR1 MOSFET is a double-diffused RF power device designed to operate in the VHF, UHF and L band. It features a peak power gain of 12.2 dB, a saturated drain current of 6.6 Amps, and a P3dB power output of 21 Watts. The on-resistance of the device is between 0.07 and 0.1 Ohm, rendering it suitable for linear, composite-type circuits. It also has superior thermal stability and impedances at high frequencies.

The MRF281ZR1\'s application field includes high-efficiency linear amplifiers for VHF and UHF communications. It is widely used for stereo FM transmissions, base station applications, TV transmitter stations, fixed or mobile communications, and other medium- or high-power amplifier applications.

In its construction, the MRF281ZR1 consists of a silicon epitaxial base, a silicon collector, a silicon-oxynitride anode and a silicon-permeon gate. It works by way of second-level channel modulation and activated by a voltage signal at the gate. Upon receiving such a signal, rechargeable holes move quickly from the source towards the drain, creating a higher conductive channel between source and drain, effectively allowing current flow from drain to source.

When considering RF MOSFETs for a medium- to high-power amplifier applications, many engineers look to the MRF281ZR1 for its superb peak gain and power output. Its accuracy and low noise coupled with its high reliability, makes it a perfect choice for any amplifier design. It is also well suited for VHF and UHF communications, functioning with minimal distortion and ample power. The easy gate control, low gate-source capacitance, and low gate-drain capacitance make it an ideal solution for radio frequency applications.

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