MRF282SR1

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Introduction

A MRF282SR1 is an RF power transistor constructed with a Toshiba high-resistivity silicon epitaxial planar structure, which is optimized for wideband, high-power high-gain and linearity operation in a class AB amplifier. It employs a source-degeneration circuit, high-speed voltage modulation by the gate-source bias and refined output power control technology. This transistor is an ideal choice for RF power amplifiers working in the frequency regime between 0.8 to 1.0 GHz. As an example, the transistor can be used in a radio frequency amplifier designed for the broadcast of radio signals.

Application Field

The MRF282SR1 is a wideband, high-gain transistor and is ideal for use as power amplifiers in mobile and portable communication systems, particularly applications from 0.8 to 1.0 GHz. Its efficiency and reliability make it suitable for applications that require a high-performance power amplifier, such as FWA, CDMA, CDPD, GERN, etc. It is well suited for base stations, repeaters, marine navigation and marine beacon transmissions. Additionally, the transistor is also suitable for non-mobile applications, such as transmitting to a satellite, providing power amplification in radar transmitters, broadcast radio transmitters and TV transmitters. The variety of applications that the device can be used in can also include scientific, broadcast and industrial applications.

Working Principle

The MRF282SR1 is a Darlington power transistor, which means it pairs two transistor elements in anti-parallel to expand the current-switching capability. This increases the product’s gain and power switching capability. The product’s source-degeneration circuit reduces the rise and roll-off times significantly, resulting in a highly linear power amplifier. The product’s high-speed voltage modulation by the gate-source bias increases the speed of operation. The product also implements refined output power control technology, which increases its efficiency significantly, while at the same time lowering the power supply requirements. This makes the transistor ideal for RF power amplifiers working in the frequency range of 0.8 to 1.0 GHz.

Conclusion

The MRF282SR1 is an RF power transistor that is ideal for use as power amplifiers in a variety of mobile and non-mobile applications. Its wideband, high-power, high-gain and linearity operation makes it exceptionally suitable for FWA, CDMA, CDPD, GERN, broadcast radio and TV transmitters, satellite transmissions, and radar applications. The product’s source-degeneration circuit, high-speed voltage modulation and refined output power control technology make it an excellent choice for power amplifiers in the frequencies range of 0.8 to 1.0 GHz.

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