NE55410GR-AZ Allicdata Electronics
Allicdata Part #:

NE55410GR-AZ-ND

Manufacturer Part#:

NE55410GR-AZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: FET RF 65V 2.14GHZ 16-HTSSOP
More Detail: RF Mosfet LDMOS 28V 20mA 2.14GHz 13.5dB 35.4dBm 16...
DataSheet: NE55410GR-AZ datasheetNE55410GR-AZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.14GHz
Gain: 13.5dB
Voltage - Test: 28V
Current Rating: 250mA, 1A
Noise Figure: --
Current - Test: 20mA
Power - Output: 35.4dBm
Voltage - Rated: 65V
Package / Case: 16-DFF, Exposed Pad
Supplier Device Package: 16-HTSSOP
Description

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The NE55410GR-AZ is an enhancement-mode, radio frequency (RF) field effect transistor (FET). This device is often used when reliable, high-frequency operation is required in electronic circuits. It\'s capable of handling high output power at reasonable efficiencies and can be used in several ways, including as a power amplifier or in an oscillator circuit.

An RF FET works differently than a standard transistor. It uses an internally generated electric field that is created by the junction of two different materials. This electric field creates a depletion layer, which allows the RF FET to be operated in two different directions depending on the polarity of the control voltage that is applied to the gate. One direction is used for amplifying signals and the other is used for switching.

The NE55410GR-AZ is a particularly useful RF FET for RF power applications because it is designed to be able to operate in the high-frequency (HF) band. This FET is capable of operating between 5-500 MHz, making it a great choice for applications such as AM amplifiers, FM amplifiers, and digital signal processing. It also has a large active area that provides a good noise figure and power gain. The device is also able to handle up to 15 watts of output power.

The NE55410GR-AZ is also useful in RF oscillator circuits. It can be used to create stable, high-frequency oscillations, which are then used for frequency synthesis and other purposes. The FET\'s output impedance remains essentially constant across the frequency range, making it an ideal choice for use in oscillator circuits. Furthermore, the FET\'s low capacitance makes it a good choice for use in high impedance circuit configurations, such as those found in oscillator circuits.

The NE55410GR-AZ also has excellent input and output matching, which can be tailored to the specific requirements of the user application. By carefully setting up the matching networks, the FET can be used to obtain good bandwidth, linearity, and power output. In addition, the device has good noise performance and may be used in applications that require low-noise operation.

Overall, the NE55410GR-AZ is an ideal RF FET for high frequency applications. Its excellent linearity, matching capabilities, and power output make it an ideal choice for applications such as power amplifiers, oscillator circuits, and frequency synthesis. The device also has excellent noise performance, making it suitable for applications that require low-noise operation.

The specific data is subject to PDF, and the above content is for reference

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