Allicdata Part #: | NE55410GR-T3-AZ-ND |
Manufacturer Part#: |
NE55410GR-T3-AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 65V 2.14GHZ 16-HTSSOP |
More Detail: | RF Mosfet LDMOS 28V 20mA 2.14GHz 13.5dB 35.4dBm 16... |
DataSheet: | NE55410GR-T3-AZ Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.14GHz |
Gain: | 13.5dB |
Voltage - Test: | 28V |
Current Rating: | 250mA, 1A |
Noise Figure: | -- |
Current - Test: | 20mA |
Power - Output: | 35.4dBm |
Voltage - Rated: | 65V |
Package / Case: | 16-DFF, Exposed Pad |
Supplier Device Package: | 16-HTSSOP |
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NE55410GR-T3-AZis a N-channel enhancement-mode field-effect transistor (FET) designed for radio frequency (RF) applications with a low loss up to 6 GHz. Current in the form of electrons flows through the device with the help of a gate voltage, which enables it to be used in a range of application fields. This article will explore the application fields of the NE55410GR-T3-AZ, as well as its basic working principle.
Application Fields
The NE55410GR-T3-AZ is designed for radio frequency (RF) applications, and can be used in a wide variety of radio frequency applications, such as mobile communication devices (cell phones, tablets, and the like), WLAN (wireless local area network) systems, and wireless data transmission systems. In addition, this device can be used in other applications, including power amplifiers, antennas, and signal sources.
The NE55410GR-T3-AZ is also useful for digital applications such as wireless charging systems. It is also used in digital computing applications such as digital to analog converters, analog to digital converters, and optical computing systems. Furthermore, the NE55410GR-T3-AZ can be used in analog computing applications such as audio amplifiers, video amplifiers, and speaker systems.
Working Principle
The NE55410GR-T3-AZ is designed to use electrons as the current in radio frequency (RF) applications. The behavior of this device is based on the operation of an enhancement-mode field-effect transistor (FET). The device acts as a switch in an electrical circuit by controlling the current flow by applying a gate voltage to the FET gate.
The main idea behind an enhancement-mode FET is to allow current to flow only when a gate voltage is applied. When the gate voltage is below the threshold voltage, no current can pass through the device. When the gate voltage is above the threshold voltage, current can flow from the source to the drain, through the N-channel of the FET.
The NE55410GR-T3-AZ has a low loss at frequencies up to 6 GHz, which means it can be used in applications requiring high frequency performance. This device is also designed to have a low power consumption, making it ideal for battery-powered applications, such as mobile phones.
In general, the NE55410GR-T3-AZ is a N-channel enhancement-mode FET designed for RF applications that can be used in a wide range of applications from radio communication to digital and analog computing. The device has a low loss up to 6 GHz, a low power consumption, and is ideal for both battery-powered and non-battery-powered applications.
The specific data is subject to PDF, and the above content is for reference
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