Allicdata Part #: | 497-13044-5-ND |
Manufacturer Part#: |
PD20010-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS RF N-CH FET POWERSO-10RF |
More Detail: | RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-... |
DataSheet: | PD20010-E Datasheet/PDF |
Quantity: | 502 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2GHz |
Gain: | 11dB |
Voltage - Test: | 13.6V |
Current Rating: | 5A |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 10W |
Voltage - Rated: | 40V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Supplier Device Package: | PowerSO-10RF (Formed Lead) |
Base Part Number: | PD20010 |
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The PD20010-E is a type of RF Field Effect Transistor (FET). It is a three-terminal device made up of two poles: the drain and the source. It operates using the principle of field effect, which makes it an ideal choice for applications requiring low drawing power and low noise. This type of FET is also well suited for high-frequency applications where linearity and noise are essential. The PD20010-E offers significant performance over other RF FETs and is able to operate with much lower junction temperatures.
The primary characteristics of the PD20010-E are its low noise figure and low output impedance. Both are essential for applications where higher linearity and lower noise are required. Additionally, the device is also capable of delivering high power levels despite its relative small size. It is well suited for use in both low current and high current circuits. It is also capable of operation over a wide temperature range, making it suitable for a number of industrial, military and commercial applications.
The PD20010-E is an easy to use product with features designed for simplified operation. Its small size and low electrical noise characteristics make it an ideal choice for a variety of applications. For example, it can be used to transmit signals in radios, cell phones, and satellite navigational systems. It can also be used in home theaters and other audio systems, where high acoustic fidelity is needed.
The working principle of the PD20010-E is based on the concept of field effect. The transistor is made up of two main poles: the drain and the source. When a voltage is applied to the gate, it causes an electric field to be generated, which attracts electrons towards it. This electric field affects the voltage and current flow between the two poles, resulting in current flow through the device. As the gate voltage increases, the number of electrons flowing through the device also increases, resulting in increased current flow.
The PD20010-E is designed to be a reliable solution to a wide range of RF applications. Its low noise characteristics, low output impedance and wide temperature range, make it ideal for various applications. The device is also capable of generating high power from a small package. With features designed for simplified operation and consistent performance, the PD20010-E provides a reliable choice for RF circuit design.
The specific data is subject to PDF, and the above content is for reference
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