EPC2039 Allicdata Electronics

EPC2039 Discrete Semiconductor Products

Allicdata Part #:

917-1147-2-ND

Manufacturer Part#:

EPC2039

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 80V BUMPED DIE
More Detail: N-Channel 80V 6.8A (Ta) Surface Mount Die
DataSheet: EPC2039 datasheetEPC2039 Datasheet/PDF
Quantity: 135000
Stock 135000Can Ship Immediately
Specifications
Series: eGaN®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
Description

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EPC2039 is a kind of non-insulated integrated circuit which is manufactured by Monolithic Semiconductor. It is an N-channel enhancement mode MOSFET transistor, with low on-state and off-state resistance, and exceptionally high input capacitance for improved RF performance. This transistor has a maximum drain current of 8A, a maximum voltage of 20V, a minimum voltage of 3V, and a total gate charge of 10V. It is also capable of delivering a high power up to 320W when used in a wide variety of applications, such as power management, RF power amplification, and motor control.

When used in power management and motor control, the EPC2039 is designed for high speed switching,n and is capable of delivering a very high current and voltage in a very short time. It has a low on-state resistance, which ensures that the energy stored in the FET is dissipated quickly and efficiently. The gate charge is also very low, which means that the device can easily switch on and off with little effort. The high input capacitance ensures that the device can respond to a high voltage surge and protect the load from any potential damage. The EPC2039 also has a low off-state resistance, which ensures that it does not waste power in idle periods.

In RF power amplifier and RF receiver applications, the EPC2039 transistor is used to regulate the power delivered to the load. It has low on and off-state resistances, and its high input capacitance ensures that the device can handle both large and small voltage surges without any damage to the load. It is also capable of operating at very high speeds to ensure that the desired power level is always achieved and maintained. The low gate charge of the transistor also ensures that it can respond to voltage changes quickly and accurately.

The EPC2039 transistor is an ideal choice for electric vehicle and consumer applications as it is able to deliver high power with low energy consumption. Its low off-state resistance ensures low on and off-state resistances for maximum efficiency, and its high input capacitance ensures that it can respond quickly to voltage changes. In motor control applications, the EPC2039 is usually used in combination with a motor speed controller to ensure that the motor operates at the desired speed. The low gate charge also helps to reduce over-current and over-voltage situations.

The EPC2039 transistor is a versatile component that is suitable for a wide variety of applications, from power management and motor control, to RF power amplification and RF receiver applications. Its low resistances and high input capacitance ensure that it can efficiently switch between on and off states, and can respond quickly to voltage surges. Its low gate charge also helps to reduce over-current and over-voltage situations, and its high power capability enables it to deliver high power up to 320W.

The specific data is subject to PDF, and the above content is for reference

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