Allicdata Part #: | FA38SA50LC-ND |
Manufacturer Part#: |
FA38SA50LC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | MOSFET N-CH 500V 38A SOT-227 |
More Detail: | N-Channel 500V 38A (Tc) 500W (Tc) Chassis Mount SO... |
DataSheet: | FA38SA50LC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 420nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 500W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227 |
Package / Case: | SOT-227-4, miniBLOC |
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:The FA38SA50LC is a high-performance, superjunction field-effect transistor ( FET ) that is designed to maximize power efficiency and reduce switching losses without compromising on performance. It is suitable for power switch applications such as fast load switch, synchronous rectification, DC-DC converters, and motor drive applications. This article explores the field of application and working principle of the FA38SA50LC.
Types of FA38SA50LC Applications
The FA38SA50LC is primarily used in the AC/DC switch controllers, synchronous rectifiers, and power inverters. It can also be used in high-side switching and low-side switching in DC motor drives, lighting controllers, and uninterruptible power supplies. For best results, the transistor should be operated at low frequencies, and its maximum block voltage is 16V.
Working Principle of the FA38SA50LC
The working principle of the FA38SA50LC is quite simple. The pins labeled “Source” and “Drain” are connected to an external DC ( direct current ) power source, while the “Gate” pin is connected to a control voltage source such as an MCU. When the voltage applied to the Gate pin exceeds the threshold voltage, the transistor starts to conduct, allowing current to flow from the Source to the Drain. By adjusting the voltage applied to Gate pin, you can control the amount of current that can flow between the Source and the Drain and thereby control the operation of your system.
The FA38SA50LC also has a built-in ESD ( electrostatic discharge ) protection circuit. This circuit prevents the FA38SA50LC from suffering damage in the event of a voltage spike from an electrostatic discharge. This allows the transistor to be used in a wide range of applications in the presence of electrostatic charges.
Advantages of FA38SA50LC
One of the main advantages of the FA38SA50LC is its small footprint, which makes it suitable for applications where space is at a premium. It is also relatively easy to install and requires little maintenance, making it cost effective in the long run. The transistor has a low gate charge, ensuring that it does not take too much time to switch on, making it suitable for high-speed applications. The low channel-to-body capacitance also ensures that switching losses are low, making the transistor more power efficient.
The built-in ESD protection circuit also makes the FA38SA50LC suitable for industrial and automotive applications, where electrostatic discharges may cause damage to the transistor. The low on-state resistance of the transistor also helps to reduce switching losses and increase power efficiency.
Conclusion
The FA38SA50LC is a high-performance field-effect transistor designed for power switch applications. It is suitable for AC/DC switch controllers, synchronous rectifiers, and power inverters, and its small footprint makes it ideal for applications where size is a concern. It also has excellent ESD protection, ensuring reliable operation in industrial and automotive applications. The low gate charge, low channel-to-body capacitance, and low on-state resistance of the transistor help to reduce switching losses and maximize power efficiency, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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