Allicdata Part #: | LND150N3-G-P002-ND |
Manufacturer Part#: |
LND150N3-G-P002 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 500V 30MA TO92-3 |
More Detail: | N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole T... |
DataSheet: | LND150N3-G-P002 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.24658 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 30mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 1000 Ohm @ 500µA, 0V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 740mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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LND150N3-G-P002 application field and working principle
The LND150N3-G-P002 is a N-Channel Power MOSFET, commonly referred to as a MOSFET or FET, that uses a field effect to control current in electronic circuits. This MOSFET is designed for low-cost, low-voltage power applications. It is used in a wide range of applications from switching devices to power management and conversion.
The LND150N3-G-P002 has a drain-source voltage rating of 150V and an on-state resistance of 0.08 ohms. It has a maximum continuous drain current is 18A with a maximum pulse drain current of 75A. It has an impressive power dissipation at 25°C of 8.3W and can handle a maximum operating temperature of 175°C. The LND150N3-G-P002 is housed in a TO-220 N-Channel package and measures 9.90 mm x 4.83 mm.
How Does A MOSFET Work?
MOSFETs are semiconductor devices that use an electric field to control the movement of electrons in a circuit. The LND150N3-G-P002 is a particular type of MOSFET commonly referred to as a “Power MOSFET”. This type of transistor uses an electric field to switch relatively large amounts of electrical current for low-voltage applications. This makes them ideal for switching applications such as relays and motors.
When applying a voltage to the gate terminal of the FET, the conductivity of the N-type semiconductor increases exponentially. This increases the current that is flowing through the source and drain of the FET, which is commonly referred to as the “ON-state”. Similarly, when the gate voltage is removed, the current will cease to flow, causing the FET to enter the “OFF-state”.
LND150N3-G-P002 Applications
The LND150N3-G-P002 is suited for a variety of low-voltage applications such as power management, high- and low-side switch, level shifter, synchronization, phase and voltage control, inverting and non-inverting logic level conversion, switch-mode power supply (SMPS) control, and load control. Due to its wide range of applications, the LND150N3-G-P002 is commonly used in battery chargers, power tools, UPS systems, and communication modules.
The LND150N3-G-P002 is designed for easy integration into end user applications– it is small in size, consumes little power, and operates at relatively low temperatures. In addition, it is manufactured with a Gate-Source clamp which protects the gate from over-voltage damage, thus adding an extra layer of reliability and protection to the system.
Conclusion
The LND150N3-G-P002 is a highly reliable N-Channel MOSFET designed for low-voltage applications. It is capable of handling large current pulses, has a low on-state resistance, and is equipped with a Gate-Source clamp for additional protection. Due to its versatility, the LND150N3-G-P002 is suitable for a wide range of applications, being used in battery chargers, power tools, UPS systems, and communication modules.
The specific data is subject to PDF, and the above content is for reference
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