LND150N3-G-P003

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	1000 Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id:	--
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10pF @ 25V
FET Feature:	Depletion Mode
Power Dissipation (Max):	740mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

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<p>LND150N3-G-P003 is a depletion mode N-channel MOSFET, mainly used in switching application, motor and control circuits. It can also be used as a voltage regulator, amplifier, and signal conditioning circuit. This article will introduce the application field and working principle of LND150N3-G-P003.</p><h2>Application Field</h2><p>The depletion mode N-Channel MOSFET LND150N3-G-P003 is mainly used in switching applications, motor and control circuits. It works well as a power switch due to its wide current and voltage range with low RDS(on) and fast switching capability. It is also used as an amplifier due to its excellent linearity, high precision, low noise, and low distortion attributes. This MOSFET is ideal for signal conditioning applications, including transducer and pressure gages. It can also be used as a voltage regulator to provide stable output, because of its low-voltage drop and tight on-resistance.</p><h2>Working Principle</h2><p>The depletion mode N-channel MOSFET has a ‘silicon’ base and a gate. The base is connected to a source, to which a negative voltage is applied to turn off the device. The gate is then connected to a negative potential and the current is controlled by the potential difference between the gate and the source. When more negative potential is applied to the gate, the device conducts more current due to the electron accumulation in the channel. This is done by the introduction of electrons from the source to the gate, allowing them to flow from the source to the drain. The depletion mode MOSFET also has a body diode, which acts as a reverse protection against any damage due to inductive loads or flyback in the system.</p><p>LND150N3-G-P003 is a popular MOSFET used in a wide range of applications. It has a good source-gate voltage range and a low threshold voltage, making it suitable for switching, motor and control circuits, as well as signal conditioning, amplifier, and voltage regulation circuits.</p>

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