Allicdata Part #: | LND150N3-G-P014-ND |
Manufacturer Part#: |
LND150N3-G-P014 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 500V 30MA TO92-3 |
More Detail: | N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole T... |
DataSheet: | LND150N3-G-P014 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.24658 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 30mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 1000 Ohm @ 500µA, 0V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 740mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
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LND150N3-G-P014 is a N-channel MOSFET transistor which is a type of semiconductor switch. It is formed by a source and a drain on the left and right sides and a channel in between them. The gate of the MOSFET is connected to the channel which is the control point for the device. When the gate voltage is increased, the MOSFET is switched on and current flows from the source to the drain. This is called the ON-state.
The main application of the LND150N3-G-P014 is switching applications, where a relatively small current is used to turn on and off a larger current. These switches can be used to control or actuate a large array of electronic applications, such as motor control, power supplies, and control systems. It is also commonly used in amplifiers and other high frequency switching applications.
The working principle of the LND150N3-G-P014 is a variation of the metal-oxide-semiconductor field-effect transistor (MOSFET). The three terminals from the MOSFET-the source, the drain, and the gate-are all essential for the functioning of the device. A voltage applied to the gate induces an electric field in the MOSFET, which opens up a conducting channel in the MOSFET’s oxide layer, allowing current to flow from the source to the drain. When the voltage applied to the gate reaches a certain limit, the MOSFET will switch off and no current can flow.
The LND150N3-G-P014 MOSFETs have a number of advantages compared to other types of transistors, such as lower power consumption, higher switching speed, and higher breakdown voltage. They are also smaller in size, making them ideal for portable electronic devices. The control of this type of transistor is also easier due to its relatively low gate capacitance.
In conclusion, the LND150N3-G-P014 is a widely used MOSFET transistor with a variety of applications in switching, motor control, power supplies, control systems, and amplifiers. Its principal operation is based on the MOSFET structure, which opens up a conducting channel in the oxide layer when a certain voltage is applied to the gate. This MOSFET device has a number of advantages such as low power consumption and higher speed of switching, making it ideal for a wide range of portable applications.
The specific data is subject to PDF, and the above content is for reference
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