LND150N8-G Discrete Semiconductor Products |
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Allicdata Part #: | LND150N8-GTR-ND |
Manufacturer Part#: |
LND150N8-G |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 500V 30MA SOT89-3 |
More Detail: | N-Channel 500V 30mA (Tj) 1.6W (Ta) Surface Mount S... |
DataSheet: | LND150N8-G Datasheet/PDF |
Quantity: | 24000 |
2000 +: | $ 0.29201 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 30mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 1000 Ohm @ 500µA, 0V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-89-3 |
Package / Case: | TO-243AA |
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Field-effect transistors (FETs) are a type of transistor, which uses an electric field to control the flow of current. The LND150N8-G is a particular type of metal-oxide-silicon field-effect transistor (MOSFET). It is a single-channel device, meaning that it consists of one conducting channel which is controlled through the application of a voltage.
Features and Benefits
The major features and benefits of the LND150N8-G include its high speed switching, high-grade insulation, and low on-resistance. The device can switch faster than comparable devices due to its low channel on-resistance. Additionally, the device has a high-grade electric insulation, providing excellent performance in a wide range of environments, including humid, dusty or wet locations. Finally, the device operates with a low on-resistance, meaning that less power is needed to turn the device on, allowing for higher power savings.
Applications
The LND150N8-G is best suited for power transmission applications. These include battery chargers, DC-DC converters, solar inverters, and motor drives. Additionally, the device is also used in automotive applications, such as ABS and ECM systems, as well as in medical devices and in industrial control systems.
Working Principle
The LND150N8-G consists of a source, drain, and gate. The source and drain represent the entrance and exit of the current; the gate represents the input (or control) voltage. When a voltage is applied to the gate, it creates an electric field which changes the conductivity of the semiconductor, allowing current to flow between the source and drain. This is known as the “field effect”, and is the basis for the functioning of all FETs. In the case of the LND150N8-G, the electric field will be strong enough to allow a large current to pass through when the applied voltage is above a certain threshold.
Conclusion
The LND150N8-G is a single-channel metal-oxide-silicon field-effect transistor (MOSFET). It is capable of high-speed switching, high-grade insulation, and low on-resistance. The device is best-suited for power transmission applications, as well as automotive, medical, and industrial control systems. The device works on the principle of the field effect, wherein an electric field is created by the application of a voltage to the gate, in order to control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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