NX138BKR Allicdata Electronics

NX138BKR Discrete Semiconductor Products

Allicdata Part #:

1727-2662-2-ND

Manufacturer Part#:

NX138BKR

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V TO-236AB
More Detail: N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount ...
DataSheet: NX138BKR datasheetNX138BKR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02457
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.49nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 20.2pF @ 30V
FET Feature: --
Power Dissipation (Max): 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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NX138BKR is the field effect transistor which is widely used in most of the electronics applications. It is designed by National Semiconductor and is widely used in most of the high speed analog circuits. This particular transistor is designed to produce a high speed response with excellent power handling capabilities. The NX138BKR uses a single silicon MOSFET transistor as its main component. This makes it quite suitable for high performance applications.

NX138BKR Application Field

The NX138BKR can be used in a variety of analog applications, due to its high performance abilities and excellent power handling capabilities. This makes it suitable for use in radio frequency and microwave applications, as well as data transmission, power supply, and high-voltage and high-current applications. The maximum voltage for the NX138BKR is 200V, and its power handling capability is 40V-20A.

The NX138BKR is also suitable for use in automotive, industrial and communication power applications. In addition, it can be used in digital circuits, and is particularly useful for high speed switching or inefficiency control. Furthermore, because of its wide power handling capabilities, the NX138BKR can be used in power amplifiers, power rectifiers, switching regulator, inverter, and other power control circuits.

NX138BKR Working Principle

Unlike many other transistors, the NX138BKR requires no external connections in order to work correctly. The MOSFET transistor is designed to use the same amount of current regardless of the voltage applied. The MOSFET controls the amount of current that is allowed to flow by adjusting the voltage that is applied to one of its terminals. This allows for extremely efficient control and manipulation of current flow.

The NX138BKR is also designed to provide a good performance at high power level. In addition, the MOSFET makes it suitable for high speed analog and digital circuit applications. The transistor can also be used in voltage regulators and logic circuits due to its ability to control the amount of current passing through it. The MOSFET can also be used for providing interface signals in digital circuits.

Conclusion

The NX138BKR is an excellent example of a single MOSFET field effect transistor that can be used in a variety of analog and digital circuits. Its ability to handle high voltage and current makes it suitable for power devices and applications, as well as digital and analog ones. With reliable performance and efficient control of current flow, the NX138BKR is a practical option for many applications.

The specific data is subject to PDF, and the above content is for reference

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