NX3008NBKW,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1280-2-ND |
Manufacturer Part#: |
NX3008NBKW,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V SOT323 |
More Detail: | N-Channel 30V 350mA (Ta) 260mW (Ta), 830mW (Tc) Su... |
DataSheet: | NX3008NBKW,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04199 |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 260mW (Ta), 830mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323-3 |
Package / Case: | SC-70, SOT-323 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
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The NX3008NBKW,115 is a high power, discrete N-Channel UltraFET Power MOSFET. It is designed to handle gate drive voltages up to 20V and currents up to 20A while achieving very low on-state resistance.
The device features an on-state resistance (RDS(on)) of 115mΩ and is capable of dissipating up to 50W of power in a D2PAK package. The NX3008NBKW,115 is suitable for use in high power switching applications such as DC-DC converters, motor drivers, and power supplies.
Application Fields
The NX3008NBKW,115 is specifically designed for high performance, linear power and non-linear switching applications. It is suitable for both analog and digital switching applications, allowing it to be used in a wide range of power management applications such as DC-DC converters, Motor drivers and power supplies. Its ultra-low on-state resistance is ideal for applications which require high voltage and low current, making it an excellent choice for high power switching applications.
The NX3008NBKW,115 is also suitable for use in high side switching applications such as load sharing and level shifting, as it is able to provide very low on-state resistance to efficiently drive the load. Additionally, its low output capacitance allows it to provide high-frequency operation, making it suitable for pulse width modulation (PWM) applications.
Working Principle
The working principle of the NX3008NBKW,115 is based on the fact that when a voltage is applied to the gate of an N-Channel FET, a channel is created between the source and drain. This enables current to flow from the source to the drain creating a conductive path. By changing the voltage applied to the gate, the width of the channel can be varied, allowing the flow of current through the device to be controlled.
The NX3008NBKW,115 allows for high performance power switching with very low on-state resistance for reliable operation. The low output capacitance of the device enables fast switching times and improved efficiency. Additionally, the high power capability of the device allows it to be used in a variety of applications including DC-DC converters, Motor drivers and power supplies.
Overall, the NX3008NBKW,115 is an excellent choice for high performance, high power switching applications due to its low on-state resistance, fast switching times and excellent reliability. Its ultra-low on-state resistance makes it an ideal choice for applications which require high voltage and low current, while its low output capacitance delivers high-frequency operation, making it well suited to PWM applications.
The specific data is subject to PDF, and the above content is for reference
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