NX3020NAKT,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-10506-2-ND |
Manufacturer Part#: |
NX3020NAKT,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V 180MA SC-75 |
More Detail: | N-Channel 30V 180mA (Ta) 230mW (Ta), 1.06W (Tc) Su... |
DataSheet: | NX3020NAKT,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 180mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.44nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 230mW (Ta), 1.06W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-75 |
Package / Case: | SC-75, SOT-416 |
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Transistors - FETs, MOSFETs - Single
The NX3020NAKT,115, or NX3020, is a single N-channel MOSFET transistor designed and manufactured by Nexperia. It has been developed to meet the highest standards of power efficiency and system performance while maintaining low on-state resistance.
The NX3020 is primarily designed for applications that require high efficiency and low voltage drain, such as power converters, motor control and industrial power management. It is built on Nexperia\'s advanced process technology and offers significant improvements over standard MOSFETs in terms of reliability, thermal performance and cost.
Features and benefits
- NX3020 MOSFET transistor offers significantly lower Rds(on) levels and improved on-state characteristics compared to standard MOSFET transistors
- Very low power losses and high power efficiency
- Very low on-state resistance, excellent thermal and electrical performance
- Advanced process technology - excellent results in a wide range of applications
Applications
The NX3020 MOSFET is suitable for applications where a high degree of efficiency is required. These include motor speed control, power converters, motor control and industrial power management. It is also suitable for a wide range of other applications where a low voltage drain is required, such as power supplies, audio systems, off-line switching and diagnostic systems.
How it works
The NX3020NAKT,115 is a single N-channel enhancement-mode vertical MOSFET transistor. It is designed to operate at low voltages and is capable of switching high currents with very low losses. Its on-state resistance (Rds(on)) is very low and is designed to optimise power efficiency. When the gate-source voltage is applied, a strong inversion layer is formed, allowing current to flow through the channel. This process is known as “enhancement-mode” operation.
The low Rds(on) of NX3020NAKT,115 ensures the lowest possible losses in the transistor and therefore ensures maximum efficiency of the power supply design. In addition, the advanced process technology used in the manufacturing process provides high reliability and improved thermal performance.
Conclusion
NX3020NAKT,115 is a single N-channel MOSFET transistor designed and developed by Nexperia. It is primarily suited for applications that require high efficiency and low voltage drain, such as power converters, motor control and industrial power management. It has very low on-state resistance, excellent thermal and electrical performance, and advanced process technology which leads to improved reliability and performance. The NX3020NAKT,115 offers significant advantages over standard MOSFETs in terms of efficiency, on-state characteristics and cost.
The specific data is subject to PDF, and the above content is for reference
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