NX7002AKAR Allicdata Electronics

NX7002AKAR Discrete Semiconductor Products

Allicdata Part #:

1727-1290-1-ND

Manufacturer Part#:

NX7002AKAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V TO-236AB
More Detail: N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Su...
DataSheet: NX7002AKAR datasheetNX7002AKAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
FET Feature: --
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The NX7002AKAR is a single-sided, low-power Field-Effect Transistor (FET) with a maximum power dissipation of 2W. It is specifically designed for applications that require speed and efficiency, such as switching and amplification. This FET offers excellent noise immunity, low gate-to-drain capacitance, and low turn-on and turn-off times. The NX7002AKAR is compatible with 3V, 5V, and 12V power supplies, making it an ideal choice for a variety of applications.

The working principle of a Field-Effect Transistor (FET) is based on the charge carrier mobility in a semiconductor material. FETs are composed of source and drain connections to which electron-hole pairs move when an electric field is applied. When the gate voltage is increased, the electric field becomes strong enough to cause a change in the amount of charge carrier movement between the source and the drain. By controlling the gate voltage, the electron-hole pairs are able to be switched on or off, controlling the amount of current flowing between the source and the drain.

The NX7002AKAR is most commonly used for switching and amplification in applications such as power supplies, motor control, and audio. Its low on-resistance and low gate-to-drain capacitance make it suitable for high-frequency applications. It can also be used in a variety of other applications where low power consumption is required, such as pulse shaping and signal generation.

In addition to its low-power capabilities, the NX7002AKAR is also highly reliable and cost-effective. Its robust design ensures that it can withstand high temperatures, making it ideal for use in harsh environments. It is also RoHS compliant and features an on-resistance of 2.5 ohms.

The NX7002AKAR is a versatile, low-power FET that is suitable for a wide range of switching and amplification applications. Its small size and low power requirements make it ideal for applications where size and power consumption are key constraints. Its fast switching times, high reliability, and cost-effectiveness make it an excellent choice for those looking for a reliable, cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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