NX7002AKAR Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1290-1-ND |
Manufacturer Part#: |
NX7002AKAR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V TO-236AB |
More Detail: | N-Channel 60V 190mA (Ta) 265mW (Ta), 1.33W (Tc) Su... |
DataSheet: | NX7002AKAR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 190mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.43nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 17pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 265mW (Ta), 1.33W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NX7002AKAR is a single-sided, low-power Field-Effect Transistor (FET) with a maximum power dissipation of 2W. It is specifically designed for applications that require speed and efficiency, such as switching and amplification. This FET offers excellent noise immunity, low gate-to-drain capacitance, and low turn-on and turn-off times. The NX7002AKAR is compatible with 3V, 5V, and 12V power supplies, making it an ideal choice for a variety of applications.
The working principle of a Field-Effect Transistor (FET) is based on the charge carrier mobility in a semiconductor material. FETs are composed of source and drain connections to which electron-hole pairs move when an electric field is applied. When the gate voltage is increased, the electric field becomes strong enough to cause a change in the amount of charge carrier movement between the source and the drain. By controlling the gate voltage, the electron-hole pairs are able to be switched on or off, controlling the amount of current flowing between the source and the drain.
The NX7002AKAR is most commonly used for switching and amplification in applications such as power supplies, motor control, and audio. Its low on-resistance and low gate-to-drain capacitance make it suitable for high-frequency applications. It can also be used in a variety of other applications where low power consumption is required, such as pulse shaping and signal generation.
In addition to its low-power capabilities, the NX7002AKAR is also highly reliable and cost-effective. Its robust design ensures that it can withstand high temperatures, making it ideal for use in harsh environments. It is also RoHS compliant and features an on-resistance of 2.5 ohms.
The NX7002AKAR is a versatile, low-power FET that is suitable for a wide range of switching and amplification applications. Its small size and low power requirements make it ideal for applications where size and power consumption are key constraints. Its fast switching times, high reliability, and cost-effectiveness make it an excellent choice for those looking for a reliable, cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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