Allicdata Part #: | NX7002BKVL-ND |
Manufacturer Part#: |
NX7002BKVL |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 270MA TO236AB |
More Detail: | N-Channel 60V 270mA (Ta) 310mW (Ta) Surface Mount ... |
DataSheet: | NX7002BKVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01927 |
Series: | TrenchMOS™ |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 23.6pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 310mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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:NX7002BKVL is a single N-channel enhancement mode MOSFET which belongs to the family of Field Effect Transistors (FETs). It is used for power management and switching applications, such as in switching mode power supplies (SMPS). This MOSFET is specially designed for use in applications where high-power switching is required, such as in solar inverters and LED lighting. It has been carefully optimized for peak performance and low on-state resistance, making it an ideal choice for high-efficiency power management solutions.
The NX7002BKVL is typically used as a switching device in power conversion applications and makes use of PowerMOS technology. This is a combination of high speed, low RDS(on), good avalanche capability and improved power handling. The basic device structure is a planar CMOS N-channel double-diffused silicon MOSFET. It features the latest technology for low on-state resistance and high avalanche capability.
The working principle of the NX7002BKVL component is based on the charge-carrier injection principle. When a positive gate voltage is applied the electrons move from the source to the drain region and become trapped in the depleted region between the source and the drain. This creates a depletion region, also known as a MOSFET channel. As the voltage applied to the gate source increases, the width of the channel increases causing electron current flows more easily between the source and the drain.
When the gate voltage is removed the channel becomes narrower, reducing the current flow between the source and the drain. In this way the NX7002BKVL MOSFET acts as a switch, controlling the current flow across its channel. The component has a breakdown voltage of 500V and a maximum operating temperature of 150°C. It also has a design life of up to 10,000 switching cycles.
The NX7002BKVL is an excellent component for power management applications as it provides a wide range of features including excellent switching capabilities, extremely low on-state resistance, and high voltage handling capability. Its superior design and performance make it an ideal choice for applications where power switching is required. The component is also relatively inexpensive and reliable, making it suitable for use in a range of power management applications.
The specific data is subject to PDF, and the above content is for reference
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