RXH125N03TB1 Allicdata Electronics
Allicdata Part #:

RXH125N03TB1-ND

Manufacturer Part#:

RXH125N03TB1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 30V 12.5A 8SOIC
More Detail: N-Channel 30V 12.5A (Ta) 2W (Ta) Surface Mount 8-S...
DataSheet: RXH125N03TB1 datasheetRXH125N03TB1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
FET Feature: --
Power Dissipation (Max): 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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The RXH125N03TB1 is a MOSFET used in a variety of applications that require high current capacity and reliability. This type of MOSFET is called a single MOSFET, offering a single mode of operation across its drain, gate, and source connections. The RXH125N03TB1 is a surface-mount type MOSFET and comes in a variety of voltages ranging from 2V to 24V. The device is manufactured using advanced silicon technologies and is equipped with a temperature sensor to ensure proper operation in areas with elevated temperatures.

The transistors in the device offer a self-regulating drain current regulating capability which helps improve system performance and helps minimize switching losses due to its low gate resistance and high breakdown voltage. The device features exceptional stability while operating, allowing it to serve in a variety of applications with guaranteed output performance. The RXH125N03TB1 is also designed to be highly efficient and can handle large amounts of power without overheating.

The RXH125N03TB1 utilizes a high quality packaging technology that ensures that it can function correctly in the harshest environments. The device is designed to thrive in temperatures ranging from -40 C to 100 C. The device produces minimal noise and low switching energy dissipation for improved performance. The device is also protected against electrical transients, ensuring reliable operation in a variety of applications.

The working principle behind the RXH125N03TB1 involves the manipulation of the potential across the drain and source of the device. This type of MOSFET is composed of a semiconductor material that can be manipulated, allowing for the voltage at the drain to be regulated. When the group is applied to the gate of the MOSFET, this creates an electrostatic field that causes the positive charges in the semiconductor material to move towards the negative terminal, allowing for a conducting path to be created. Depending on the voltage and type of MOSFET, the amount of current that can be controlled can vary.

MOSFETs are widely used in a variety of electronic applications and the RXH125N03TB1 is no exception. This type of MOSFET is used in many industries, such as power management and motor control, that require reliable and efficient switching functions. The device is also used in applications such as motor speed control, servo systems, and PWM applications. The device is capable of handling large current capacity, making it especially useful in high current and high speed applications.

The RXH125N03TB1 is widely used in applications such as DC-DC converters, solid state relays, AC motor controllers, and power stages for power inverters. The device is able to handle large current capacity, making it especially useful in applications where low on-resistance is desirable. This type of MOSFET is also highly reliable, making it ideal for applications that require frequent cycling and high current on/off configurations. The device is also capable of achieving high power savings, making it a popular choice for those looking to reduce energy consumption.

The specific data is subject to PDF, and the above content is for reference

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