Allicdata Part #: | RXR035N03TCL-ND |
Manufacturer Part#: |
RXR035N03TCL |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 3.5A TSMT3 |
More Detail: | N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TSMT... |
DataSheet: | RXR035N03TCL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14262 |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT3 |
Package / Case: | SC-96 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 3.3nC @ 5V |
Vgs (Max): | ±20V |
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Introduction
The RXR035N03TCL is a single MOSFET that is designed for the analogue low voltage high frequency switching applications. It is a wideband, low impedance, fast switching transistor that features an exceptionally low on-resistance characteristic. The RXR035N03TCL offers high switching frequency, low noise and high speed switching operation, while maintaining exceptionally low on-resistance.
Application Field
The application field of the RXR035N03TCL includes various analogue low voltage high frequency applications. It can be used in applications such as analogue audio amplifiers, voltage controlled oscillators and pulse generator circuits. In addition, it can also be used in a variety of other applications. These include Class-D amplifiers, power conditioners and high frequency relays. The RXR035N03TCL can also be used in regulated power supplies, motor drivers, and LED lighting applications.
Working Principle
The working principle behind the RXR035N03TCL is based on MOSFET switching. MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are effectively transistors with three terminals - Drain, Source and Gate. They are one of the most widely used active elements in integrated circuits, due to their low power consumption, higher switching speed and the signal fidelity that can be achieved with them.
The RXR035N03TCL operates on the principle of voltage dependent channel formation and channel modulation. When a voltage is applied to the Gate terminal, a drain-to-source channel is formed in the semiconductor of the MOSFET, depending on the magnitude and polarity of the voltage applied. This allows electrons to flow from the drain to the source. The channel width is also controllable and can be modulated to control the current flows through the transistor. As a result, the RXR035N03TCL is able to perform high frequency switching.
In addition to the high speed switching, the RXR035N03TCL also features an exceptionally low on-resistance characteristic. This allows for a smoother current flow, without any significant power loss due to excess heat generation. This not only ensures better efficiency but also ensures that the longevity of the device remains unaffected.
Conclusion
The RXR035N03TCL is a single MOSFET designed for the analogue low voltage high frequency switching applications. It features an exceptionally low on-resistance and high switching frequency, making it ideal for a variety of applications such as Class-D amplifiers, power conditioners, LED lighting and regulated power supplies. In addition, the RXR035N03TCL operates on the principle of voltage dependent channel formation and channel modulation, allowing for high speed and efficient switching.
The specific data is subject to PDF, and the above content is for reference
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RXR035N03TCL | ROHM Semicon... | 0.16 $ | 1000 | MOSFET N-CH 30V 3.5A TSMT... |
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