IXA40RG1200DHGLB-TRR Allicdata Electronics
Allicdata Part #:

IXA40RG1200DHGLB-TRR-ND

Manufacturer Part#:

IXA40RG1200DHGLB-TRR

Price: $ 8.82
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT PHASELEG 1200V 30A SMPD
More Detail: IGBT Array PT Half Bridge 1200V 63A 230W Surface M...
DataSheet: IXA40RG1200DHGLB-TRR datasheetIXA40RG1200DHGLB-TRR Datasheet/PDF
Quantity: 1000
200 +: $ 8.01801
Stock 1000Can Ship Immediately
$ 8.82
Specifications
Series: ISOPLUS™
Part Status: Active
IGBT Type: PT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 63A
Power - Max: 230W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
Current - Collector Cutoff (Max): 150µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Supplier Device Package: ISOPLUS-SMPD™.B
Description

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Transistors - IGBTs - ArraysThe IXA40RG1200DHGLB-TRR is a type of transistor array, which is a dynistor consisting of four individual insulated-gate bipolar transistors (IGBTs). This type of transistor array has a wide range of applications, and it is commonly used in the automotive, industrial and high-power motor control markets. It is suitable for applications that require operating voltages up to 1200 V and temperature ranges up to 175°C.This type of transistor is composed of four individual IGBTs, which are connected in an "H" bridge configuration. This allows the current to be switched in both directions while still keeping the gate voltage independent. This allows the current to be controlled dynamically, which is important in applications such as motor control and power conditioning. Each IGBT has a designated gate terminal, which is used to control the switching of the IGBT.The IXA40RG1200DHGLB-TRR has a maximum current rating of 200 A and a maximum power dissipation of 660W, depending on the operating temperature. This device has a maximum on-state voltage drop of 1.78 V. It is also equipped with an integrated diode, which provides protection against inductive load spikes. This transistor also has a thermal resistance of 12.5 K/W, which is helpful in applications that require high power dissipation.The IXA40RG1200DHGLB-TRR has many applications, including motor control, power conditioning, power supplies, and solar inverters. In the motor control field, this type of transistor array can be used to control the speed, direction and torque of the motor. It can also be used to supply power to other devices such as sensors and actuators. In the field of power conditioning, this device can be used to regulate and protect a power supply system from short-circuit and over-current conditions. In solar inverters, the IXA40RG1200DHGLB-TRR can be used to convert direct current from the photovoltaic arrays into alternating current. This transistor can handle high currents and provide stable operation over a wide temperature range.The working principle of this device is fairly simple. The IGBTs act as switches, which allow the current to be switched in both directions while still keeping the gate voltage independent. The gate terminals are used to control the switching of the IGBTs, while the integrated diode provides protection against inductive load spikes. Overall, the IXA40RG1200DHGLB-TRR is a powerful transistor array that can handle high current ratings and provide stable operation over a large temperature range. It can be used in many applications, including motor control, power conditioning, power supplies, and solar inverters. The working principle is straightforward, making this device an attractive and durable option for many different applications.

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