MMBFJ271 Discrete Semiconductor Products |
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Allicdata Part #: | MMBFJ271TR-ND |
Manufacturer Part#: |
MMBFJ271 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 30V 0.225W SOT23 |
More Detail: | JFET P-Channel 30V 225mW Surface Mount SOT-23-3 |
DataSheet: | MMBFJ271 Datasheet/PDF |
Quantity: | 35900 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 6mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1.5V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBFJ271 |
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MMBFJ271 is a type of Junction Field Effect Transistor (JFET). It is designed for switching applications, signal amplification and signal processing. This device has an advantage of having a low noise figure. MMBFJ271 also has low power loss and high frequency characteristics, which make it suitable for many high-demand applications, such as communications circuits, motor drives, audio processing and power electronic control.
The MMBFJ271 is a three-terminal device that operates according to the field effect principle, where a small electric field is used to control the current flowing through the device. It consists of two n-type regions and one p-type region connected in a Si-channel. Two of the terminals, the Drain and Source, are connected to the n-type region, and the other terminal, the Gate, is connected to the p-type region. By applying a voltage to the Gate terminals, the current between the Drain and Source can be controlled.
The main application for the MMBFJ271 is in switching applications such as in power amplifiers and relays, where it is used to control the current flow in a circuit. Additionally, its low noise capability makes it suitable for use in signal amplifiers, where it can be used to amplify signals at low frequencies with low distortion. It can also be used in communications circuits, where it can be used to amplify signals in order to reduce distortion. The MMBFJ271 is also suitable for use in motor drives, as it can be used to regulate the current draw of motors and thus maximize their efficiency. Finally, the MMBFJ271 can be used in audio processing, where it can be used to regulate the volume and reduce distortion.
The current between the Drain and Source is controlled by the gate voltage. When the gate voltage is higher than the "threshold voltage", then current will flow between the Drain and Source. The threshold voltage is determined by the amount of current flowing through the Gate, which can be adjusted with the Gate bias resistor. The Gate bias resistor is a resistor that is used to adjust the amount of current passing through the Gate, thereby controlling the current flowing through the Drain and Source. When the Gate bias resistor is increased, the current that passes through the Gate reduces, and the threshold voltage increases, which reduces the current flowing between the Drain and Source.
In summary, the MMBFJ271 is a type of Junction Field Effect Transistor which is suitable for switching applications and signal amplification. It has an advantage of having a low noise figure, low power loss and high frequency characteristics, which make it suitable for many applications such as communications circuits, motor drives, audio processing and power electronic control. The current between the Drain and Source is controlled by the Gate voltage, which is determined by the amount of current flowing through the Gate. This current can be adjusted by using the Gate bias resistor.
The specific data is subject to PDF, and the above content is for reference
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