FT24C08A-ULR-T Integrated Circuits (ICs)

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Memory is an integral part of technology and the FT24C08A-ULR-T is a memory device that is becoming increasingly popular due to its range of applications and simplicity of use. It is a 8-bit Serial EEPROM, designed to provide storage and read/write access of data at a low cost with minimal pin drive. The FT24C08A-ULR-T is used in applications such as automotive, consumer electronics, gaming, industrial, medical and general computing.

The FT24C08A-ULR-T is the lowest pin count EEPROM available and is 8 kbit serial EEPROM with a 2-wire bus interface. It has lower pin count than any other conventional EPROM (Erasable Programmable Read-Only Memory) and is compatible with both I2C and SPI bus. Its small size and low power consumption make it perfect for electronic devices with limited space as well as for devices that require a low power consumption.

The FT24C08A-ULR-T is based on a two-wire, bidirectional serial bus interface, compatible with the I2C protocol. It has a 128 x 8 bit organization and can access any of 1024 single bytes. It has two address bytes, the 8 bit Address Byte and the 8 bit Data Byte. The Address Byte provides the location and the Data Byte provides the data.

The FT24C08A-ULR-T is an extremely versatile device, as it can be programmed and erased up to one million times. It has an endurance of 16 Million cycles per byte, which is extremely high and makes it suitable for memory intensive applications. It has a Data Retention of 10 Years and an Operating Temperature Range of 5 to 125 °C.

The FT24C08A-ULR-T working principle is based on the CMOS (Complementary Metal-Oxide Semiconductor) technology. It is an EEPROM device in which data is stored in cells that can be individually erased and reprogrammed. Each cell has a charge pump consisting of two or more transistors, which enables the programmer to apply a positive and negative voltage to the cell.

The programming of the device is done by applying the proper voltage to the cell, which will cause the electrons to move into the cell. After a few milliseconds, the charge is completely discharged and the device erases itself. To write new data, the electrode is energized again and the charge is pumped again. The energy required to turn on the electrodes and write data is supplied by the FT24C08A-ULR-T’s internal charge pump.

The FT24C08A-ULR-T can be used in a wide variety of applications and is extremely flexible. It has multiple addressing modes and can be programmed and erased up to one million times. It operates at low power and has a range of options for memory protection.

The FT24C08A-ULR-T is a memory device that is widely used in many industries due to its low cost and versatile features. It is suitable for any device that requires low power consumption and can be programmed and erased up to one million times. The device is based on the CMOS technology and has an endurance of 16 Million cycles per byte. It has multiple addressing modes and is also available in a low pin count version. The FT24C08A-ULR-T is a great choice for any application that requires a reliable, low cost memory device.

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