U6264BDK07LLG1 Allicdata Electronics
Allicdata Part #:

1450-1244-5-ND

Manufacturer Part#:

U6264BDK07LLG1

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 64K PARALLEL 28DIP
More Detail: SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parall...
DataSheet: U6264BDK07LLG1 datasheetU6264BDK07LLG1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP
Description

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The U6264BDK07LLG1 is a standardized 8-bit, low voltage, pseudo-pre-programmed, low power, hybrid CMOS Static RAM. It\'s commonly used memory module. This specialized memory determines the logic level of a semiconductor circuit without the need for a circuit input.

The U6264BDK07LLG1 features deep power down sleep mode to conserve energy with an automatic wake up when power is restored. It requires no checks for write operation enabled and fewer read operations. In addition, this chip has reduced CA (Current Address) level with DRAM Refresh.

The main application fields for the U6264BDK07LLG2 memory chip include embedded systems (like the Sony PlayStation), ASICs, and data storage in printers, faxes, and other digital equipment. It is also used in many digital electronics, including laptops and personal digital assistants (PDAs).

The working principle of U6264BDK07LLG2 is based on a method called Static RAM (SRAM). SRAM uses a flip-flop design to store a bit of information. An access transistor is connected to each bit of the memory cell, and is used to read and write data. This design allows data to be written and read quickly compared to traditional dynamic RAM (DRAM). SRAM also has higher data retention than DRAM, since it does not require the frequent refreshing that DRAM does.

The U6264BDK07LLG2 memory module consists of 64K bits, organized into 16K words. Each word contains 8 bits of data, plus a parity bit. It has various functions, such as full chip test, half chip test, all zero state, chip select control, control, low current mode control, write protection control, output control, and others.

The U6264BDK07LLG1 memory module is known for its low power consumption and low noise, making it more suitable for embedded and portables products. It is designed to operate on both standard and low voltage levels, ensuring a reliable operation across a broad range of system power supply volatages. It also provides an extended temperature range, allowing it to be used in hostile environments.

Overall, the U6264BDK07LLG1 offers superior performance compared to other semiconductor memories in terms of lower power consumption, higher performance and extended temperature range. Furthermore, its quick write and read times and high data retention make it one of the most preferred choices in the memory market.

The specific data is subject to PDF, and the above content is for reference

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