U6264BS2K07LLG1TR Allicdata Electronics
Allicdata Part #:

U6264BS2K07LLG1TR-ND

Manufacturer Part#:

U6264BS2K07LLG1TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 64K PARALLEL 28SOP
More Detail: SRAM - Asynchronous Memory IC 64Kb (8K x 8) Parall...
DataSheet: U6264BS2K07LLG1TR datasheetU6264BS2K07LLG1TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.38mm Width)
Supplier Device Package: 28-SOP
Description

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The U6264BS2K07LLG1TR belongs to the category of memory, it is a type of static RAM (SRAM) memory, which is composed of 6264 cells and offers a total storage capacity of 2KBit (256 bytes). It consists of four bidirectional data I/O pins. Each data I/O has the capability to operate in both input and output modes, controlled by a designated control pin.

As SRAM, U6264BS2K07LLG1TR enables high speed reading and writing. Furthermore, it has a wide voltage and temperature operating range, an appropriate solution for applications covering automotive, consumer, industrial, and military/aerospace industry.

At the operational level, the U6264BS2K07LLG1TR requires a dual-port architecture, consuming low power by employing 0.8V core and 1.8V I/O supplies. These memory components provide high-reliability and low-power enabled design solutions for application in consumer and industrial markets.

The U6264BS2K07LLG1TR device incorporates two chip enable (CE) and output enable (OE) pins. The CE pin controls the access to each cell and the OE controls the output of the tandem cells. It is possible to activate the device via the CE input and the OE pin determines when the output is enabled. These pins enable high speed data transfer.

The U6264BS2K07LLG1TR operates in low power mode and the power consumption can be managed using the power-down pin, which can be set to the low power state when it is not in use. This reduction in power helps to reduce the system power requirements, making U6264BS2K07LLG1TR a more energy-efficient solution.

The U6264BS2K07LLG1TR device can store sequential data patterns and execute commands at very high speeds, which is why it finds its use in automotive, consumer, industrial, and military applications. Automotive use cases include memory circuits for device testing, engine control systems, and display panel memories. The device also finds applications in consumer products for controlling the direction of motion in entertainment systems, door locks, appliance controller memories, and process control memories.

In industrial applications, the U6264BS2K07LLG1TR is effective for mass storage devices, network communications, and machine interface memories. Military uses of this component include tactical electronic warfare, radar systems, navigation systems, and communications.

To summarize, the U6264BS2K07LLG1TR is a 2 Kbit (256 bytes) static RAM (SRAM) memory component that enables high speed memory access and data transfer. It is suitable for automotive, consumer, industrial, and military/aerospace industry applications, where the component finds its wide use in the form of engine control systems, display panel memories, motion control systems, door locks, surveillance systems, radar systems, and mass storage devices.

The specific data is subject to PDF, and the above content is for reference

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