VND7NV04TR-E Allicdata Electronics

VND7NV04TR-E Integrated Circuits (ICs)

Allicdata Part #:

497-11707-2-ND

Manufacturer Part#:

VND7NV04TR-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: MOSFET POWER 40V 6A DPAK
More Detail: N/A
DataSheet: VND7NV04TR-E datasheetVND7NV04TR-E Datasheet/PDF
Quantity: 12500
Stock 12500Can Ship Immediately
Specifications
Series: OMNIFET II™, VIPower™
Packaging: Tape & Reel (TR) 
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Rds On (Typ): 60 mOhm (Max)
Input Type: Non-Inverting
Features: --
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: VN*7NV
Description

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The VND7NV04TR-E is a self-protected 20 V n-channel Power Distribution Switch, Load Driver specifically designed for auto body applications. It is a high-voltage double-polarity MOSFET which has the combined features of a low-side switch and a high-side switch. This MOSFET has a current capacity of 3A (with a max peak current of 8A) and a maximum on-state continuous drain current of 0.7A. This can support a series of low power applications such as motor drivers, lamp drivers, etc. It is also suitable for body control modules.

The VND7NV04TR-E is specifically designed for automotive applications and is highly robust, reliable and durable. It is waterproof and can withstand high levels of shock and vibration. It also features a wide operating temperature range of -40°C to +125°C and a low on-state resistance (<0.06 Ω). This allows for efficient power distribution.

In terms of its internal structure, the VND7NV04TR-E is divided into two sections - the High Side Switch and the Low Side Switch. The High Side Switch is the core of the system. This MOSFET has a built-in P-MOSFET diode which prevents the high side switch from conducting current outside the specified range. This ensures a robust distribution of power.

The Low Side Switch section is a P-Channel MOSFET (which is a voltage-controlled switch). This switch is primarily responsible for controlling the current flow between the high side switch and the load. The Low Side Switch can be set to allow current to flow in either direction depending on the voltage applied to its control terminal. This allows the VND7NV04TR-E to be used in various applications, from basic logic circuitry to power switching.

The VND7NV04TR-E is an ideal choice for applications where a high-current circuit is required and robustness is a key feature. Due to its small size, it is also suitable for use in portable devices or automobiles where space saving is a priority. It is also suitable for use in harsh environments such as automotive body control systems or engine components. Due to its robustness, low on-state resistance and other features, the VND7NV04TR-E is a reliable and efficient solution for power distribution.

The specific data is subject to PDF, and the above content is for reference

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