199D475X0035CXV1

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Tantalum capacitors are used in a wide range of applications. They are commonly found in digital and analog computers, embedded systems, signal processing equipment, automotive electronics, industrial automation systems, military equipment, RF systems, medical systems, and many other applications. A tantalum capacitor with an alphanumeric identifier of 199D475X0035CXV1 is most likely a surface-mounted chip type capacitor.

Tantalum capacitors utilize a dielectric layer formed by an oxide film on the surface of a solid material called Tantalum. This layer of oxide on the Tantalum provides the electrical insulation necessary to construct the capacitor. The two electrodes are typically formed from two different metals. This type of capacitor is constructed using the anodizing process. The anodic oxide layer is formed by applying a voltage to the tantalum in an electrolytic solution. This process creates an oxide film on the tantalum that provides the electrical insulation for the capacitor.

Tantalum capacitors are designed for high temperature and high frequency applications due its high electrical insulation properties. They also possess higher reliability than other types of capacitors due to their high temperature and frequency performance. Furthermore, they have a lower series inductance, making them suitable for high frequency applications. The low series inductance makes them suitable for applications where high frequency stability is important.

Tantalum capacitors can be used in either AC (alternating current) or DC (direct current) applications. AC applications typically require the capacitor to maintain a constant capacitance value over a wide range of current and AC frequencies. DC applications, on the other hand, require the capacitor to remain at the same capacitance value over a given DC voltage level. The current ratings of tantalum capacitors are typically expressed in microfarads (µF).

The working principle of the 199D475X0035CXV1 tantalum capacitor is based on the capacitive characteristics of its oxide layer. The capacitor consists of two electrodes. The negative electrode is connected to the anode while the positive electrode is connected to the cathode. When an AC or DC voltage is applied to the capacitor, the anodic oxide layer absorbs charge carriers and stores them within an electric field created between the two electrodes. This electric field creates an electric dipole which acts to store electric charge. The capacitance of the capacitor is a function of the distance between the electrodes and the surface area of the dielectric layer.

The 199D475X0035CXV1 tantalum capacitor can operate within a wide range of temperatures and conditions. Its operating temperature range is typically between -55°C and 125°C. The capacitor can also handle up to 85°C continuous operation with short term temperature excursions of up to 125°C. Its ripple current rating is typically in the range of 3 – 5mA depending on the size of the capacitor. The capacitor also has a high frequency limit of 5MHz and a maximum DC voltage rating of 25V.

The 199D475X0035CXV1 tantalum capacitor is designed for use in a wide range of applications, including automotive, healthcare, industrial, consumer, and aerospace markets. It is well suited for high temperature, high frequency, and low noise applications. The capacitor also features low ESR and ESL, making it suitable for use in RF and other high frequency applications. Its capacitance stability and reliability also make it a good choice for a variety of applications.

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