1N3032BUR-1 Allicdata Electronics
Allicdata Part #:

1N3032BUR-1-ND

Manufacturer Part#:

1N3032BUR-1

Price: $ 6.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 33V 1W DO213AB
More Detail: Zener Diode 33V 1W ±5% Surface Mount DO-213AB
DataSheet: 1N3032BUR-1 datasheet1N3032BUR-1 Datasheet/PDF
Quantity: 1000
100 +: $ 6.02759
Stock 1000Can Ship Immediately
$ 6.7
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 45 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 25.1V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Base Part Number: 1N3032
Description

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1N3032BUR-1 is a silicon Zener diode from the family of Diodes – Zener – Single. It is mainly used for voltage regulation and for protection against overvoltage.

Application Field of the Diode

The 1N3032BUR-1 is a single zener diode typically employed for voltage regulation and overvoltage protection applications. It has a reverse breakdown voltage of 5.6V with ±6% tolerance, a power dissipation of 500mW, and a maximum operating temperature of 150 degree Celsius. It is ideally suitable for use in electronic circuits where voltage regulation and overvoltage protection are needed. For example, in power converters such as buck converters, the 1N3032BUR-1 can be used in the feedback loop to act as the voltage regulator.

Working Principle of the Diode

The silicon Zener diode operates with a reverse voltage significantly above its forward voltage. In other words, the diode is reverse biased, allowing electricity to flow through it in the reverse direction. When a voltage higher than the Zener breakdown voltage (VZ) is applied across the diode, the diode starts to conduct in reverse. This gives rise to a sharp increase in the reverse current (IZ). Additionally, the voltage across the diode stabilizes to the breakdown voltage (VZ) and it is this property which enables the diode to be used for voltage regulation situations. If the Reverse Voltage continues to increase beyond VZ, the reverse current (IZ) will increase accordingly. However, the voltage across the diode will remain stable as long as the power dissipation within the diode remains within the approved limits.

Conclusion

1N3032BUR-1 is an ideal choice for applications in which voltage regulation and overvoltage protection are needed. Its breakdown voltage of 5.6V with ±6% tolerance is suitable for many electronic circuits. Furthermore, it has a power dissipation of 500mW and a maximum permissible operating temperature of 150 degree Celsius.

The specific data is subject to PDF, and the above content is for reference

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