1N4448W-TP Allicdata Electronics

1N4448W-TP Discrete Semiconductor Products

Allicdata Part #:

1N4448WTPMSTR-ND

Manufacturer Part#:

1N4448W-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 75V 250MA SOD123
More Detail: Diode Standard 75V 250mA Surface Mount SOD-123
DataSheet: 1N4448W-TP datasheet1N4448W-TP Datasheet/PDF
Quantity: 207000
Stock 207000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 1N4448W
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

1N4448W-TP is a diode device with a fairly wide range of applications. It is so-called a “single” diode rectifier because it is only composed of one diode. As one of the most common rectifier products, single diode rectifiers can be seen in most places including computers, automobiles, entertainment systems, medical equipment, and industrial applications.

The 1N4448W-TP is specially designed with its own unique characteristics and capabilities. Its reverse voltage rating is 75V, with an average forward current rating of 300mA and a non-repetitive peak surge current of 1A. Its surge overload rating is 5A at 1.0ms and 10.9A at 0.1ms. Because it is made of a new generation of epitaxial planar silicon chip, its reverse recovery time is short and it reduces power dissipation. In addition, its junction temperature is also relatively low, which is about 125℃.

The 1N4448W-TP is also good for applications that have high frequency and demand high reliability. Its temperature coefficient is a huge plus point for its stability at rated power in most environmental conditions. Moreover, the 1N4448W-TP offers high forward voltage drop, making it suitable for use in power supplies, converters, and regulators.

The working principal of 1N4448W-TP is, when the anode terminal is connected to the positive power supply, the current flows through the inside of the diode. The current will move from the anode of the diode to cathode of diode, until the voltage matches with the voltage of the power supply to which the device is connected. Thus the device lets current pass only when the electric field in the opposite direction is greater than a certain value. This field is known as the electric breakdown field of the diode. The 1N4448W-TP diode is engineered to withstand such electric field due to its high durability.

With the features mentioned above, the 1N4448W-TP diode serves many different applications in the electronics industry, from AC/DC rectification to signal detection and switching. There is no doubt that 1N4448W-TP is a reliable and cost-effective solution for many inventive and delicate applications.

The specific data is subject to PDF, and the above content is for reference

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