1N4737 G Allicdata Electronics
Allicdata Part #:

1N4737G-ND

Manufacturer Part#:

1N4737 G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 7.5V 1W DO204AL
More Detail: Zener Diode 7.5V 1W ±10% Through Hole DO-204AL (DO...
DataSheet: 1N4737 G datasheet1N4737 G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±10%
Power - Max: 1W
Impedance (Max) (Zzt): 4 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 5V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Description

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Diodes, such as Zener diodes, are an indispensable component of today\'s electronics. Out of these, 1N4737 G diodes are especially noteworthy, as they are known for their versatility and reliability. In this article, we will go over the application fields and working principles of 1N4737 G diodes.

1N4737 G diodes, which are sometimes known as 3.3V Zener diodes, are used in many types of low voltage applications. For example, they are commonly used in voltage regulation circuits, where they provide a firm and reliable voltage source. Since their reverse breakdown voltage is 3.3V, they are an ideal choice for creating a stable output voltage with minimal power loss. They are also used for step-down converters, where their low voltage threshold makes them ideal for creating an efficient voltage regulation system.

In addition to their application in voltage regulation circuits, 1N4737 G diodes are commonly used as reference voltages. They are used in commercial circuits to provide a precise and reliable voltage reference, which can be used to regulate the performance of other components. They are also used in many laboratory experiments and measurements, where they are used as reference voltages to verify and compare the performance of various circuits.

The working principle of the 1N4737 G diode is quite simple and consists of a two-terminal device connected in reverse-biased configuration. The diode is built with a heavily doped p-type semiconductor and a lightly doped n-type semiconductor. When a voltage is applied to the diode, the majority carriers in the semiconductor are attracted and repelled respectively, resulting in a redistribution of charge on the semiconductor surface. This process is known as the drift-diffusion process.

Since the drift-diffusion process of 1N4737 G diodes is directly related to the applied voltage, the breakdown voltage can be controlled by adjusting the voltage applied to the diode. This makes 1N4737 G diodes perfect for voltage regulation applications, as the breakdown voltage can be precisely controlled by simply adjusting the applied voltage. This, in combination with its low power consumption, makes them a reliable choice for creating stable and efficient voltage regulation systems.

Overall, 1N4737 G diodes are a versatile and reliable choice for many low voltage applications. They are commonly used in voltage regulation circuits, reference voltage circuits and step-down converters, and are known for their low power consumption and precisely controllable breakdown voltage. Their simple working principle and easy control make them a popular choice for many types of electronics, making them an essential component of many modern circuits.

The specific data is subject to PDF, and the above content is for reference

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