1N4754AP/TR12

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	39V
Tolerance:	±5%
Power - Max:	1W
Impedance (Max) (Zzt):	60 Ohms
Current - Reverse Leakage @ Vr:	5µA @ 29.7V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 150°C
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Base Part Number:	1N4754

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The 1N4754AP/TR12 is a single Zener diode classification, perfect for uses such as surge suppression, DC regulation, and voltage stabilization. It has a high power dissipation capability and is constructed using a glass passivated junction with a Leaded Chip carrier. It has an N suffix for catastrophic multi-layer scratch protection for automatic placement machine insertion. An integrated heat-dissipating tab with flat bottom prevents the diode from lifting off the surface of the printed circuit board. The 1N4754AP/TR12 can handle an average forward rectified current of 12 Amps and a peak non-repetitive surge current of 80 Amps. The main application field of the 1N4754AP/TR12 is an efficient voltage regulator for power supplies, battery charger equipment, and load circuits. It offers a low power loss, low regulation voltage which is excellent for ripple regulation. It could also be used in switching power supplies, motor drives, and DC/AC converters. The 1N4754AP/TR12 is highly suitable for applications such as EMI suppression circuits, voltage reference circuits, and voltage-driven electronic components, or where a slight difference in values may cause a great difference in operation.The working principle of the 1N4754AP/TR12 is quite simple. It is a rectifier diode in which a voltage breakdown occurs when the reverse bias voltage reaches a certain value, the breakdown voltage or Zener voltage. The Zener voltage is a function of the diode\'s material, construction and dopant concentration rather than the temperature. When the reverse bias voltage is below the breakdown voltage, the junction behaves as an insulator, and the current flowing through the diode is only due to the leakage current. Above the breakdown voltage, the junction becomes conductive and the junction breaks down, so that the device acts as a constant voltage regulator. The breakdown voltage can be adjusted through design parameters, such as doping concentration and diode size, which allow for accurate control of the nominal Zener voltage rather than relying on temperature-dependent bandgap voltage references. In forward bias, the 1N4754AP/TR12 will act as an ordinary diode, with voltage drop and a maximum forward current limited by the design parameters of the device. Reverse leakage current is also kept very low, although not as low as that of a Schottky diode because of the lower doping level of the P-type substrate. The 1N4754AP/TR12 is designed for use with surface-mount and through-hole device types. It is available as a single diode, in both standard and mini-package formats. The sample package is an 8-pin Super Small Plastic Package (SSP) with an 8-pin Super-Small Quad-Flat No-Lead (QFN) footprint. It operates at temperatures ranging from -65°C to 175°C and the forward voltage drop is typically 0.78~0.92V. The maximum storage temperature is 175°C and the max surge current is 80A. In conclusion, the 1N4754AP/TR12 is a single Zener diode classification which could provide a highly efficient voltage regulator in various applications. It has an N suffix for catastrophic multi-layer scratch protection, a high power dissipation capability, integrated heat-dissipating tab, and a wide working temperature range. The 1N4754AP/TR12 provides the user with a low power loss, low regulation voltage, and precise control of the nominal Zener voltage.

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