1N4760APE3/TR8 Allicdata Electronics
Allicdata Part #:

1N4760APE3/TR8-ND

Manufacturer Part#:

1N4760APE3/TR8

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 68V 1W DO204AL
More Detail: Zener Diode 68V 1W ±5% Through Hole DO-204AL (DO-4...
DataSheet: 1N4760APE3/TR8 datasheet1N4760APE3/TR8 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.47959
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 150 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 51.7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Base Part Number: 1N4760
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N4760APE3/TR8 is a single zener diode in a DO-35 type package that is offered by Diodes Inc. The product is known for its low-voltage operation, low leakage, and high reliability.

The product is used in applications such as voltage regulation, voltage clamping, and surge protection. It is also used in low-voltage circuits as a voltage reference, a voltage limiter, or an amplitude limiter. An example of a typical application is where the diode is used as a voltage reference for the low-voltage regulator.

The working principle of the 1N4760APE3/TR8 is based on the electrochemical-reversal phenomenon, which occurs when an electric field of a certain intensity is applied to a junction of two dissimilar semiconductors. In a zener diode, this effect produces an abrupt voltage drop when a positive voltage is applied to the anode and a negative voltage is applied to the cathode.

The diode\'s breakdown voltage depends on the doping levels of the material used in the semiconductor junction. The larger the doping levels, the higher the breakdown voltage. The voltage required to cause breakdown is called the zener voltage. The 1N4760APE3/TR8 has a nominal rating of 5.1 volts, with a maximum 6.3 volts.

The device also has a very low reverse leakage, which is typically 0.1 microamps. The reverse leakage current is the current that flows through the diode when a negative voltage is applied to the anode and a positive voltage is applied to the cathode. This feature ensures that the device is not adversely affected by reverse voltage transients. This product is also rated for a maximum power dissipation of 500 milliwatts.

The 1N4760APE3/TR8 has been designed to provide high reliability in a wide range of applications. The product is well-suited for applications which require a zener diode that is capable of withstanding high reverse voltages, while still providing a low forward voltage drop. This product also provides excellent performance in environments that require both high voltage and low temperature.

The specific data is subject to PDF, and the above content is for reference

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