1N5361AE3/TR13

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The 1N5361AE3/TR13 diode is a single, high power, bidirectional Zener diode integrated circuit. This type of diode is commonly used in many applications such as power supply control or voltage regulation applications. It is also suitable for voltage clamping and rectifier applications.

The 1N5361AE3/TR13 diode has a breakdown voltage of 13.4 volts, making it well-suited for applications such as voltage regulation, voltage clamping and rectifier circuits. The maximum rated power dissipation of this device is 0.5 watts and the reverse leakage current is 0.1mA. This diode is available in an DO-41 package that features a low thermal resistance. It is capable of handling transient voltages up to 150V. This diode also features a low power consumption so it won’t draw too much power when in use.

The working principle of the 1N5361AE3/TR13 diode is based on the Zener effect. This effect occurs when a reverse bias voltage is applied across the diode. The intrinsic electric field drains current from the junction and causes an accumulation of electrons in the junction’s depletion layer. This layer is held at a relatively constant voltage due to the electric field, which in turn creates a Zener voltage reference. This Zener voltage reference can be used to regulate external voltage.

The 1N5361AE3/TR13 diode is ideal for a variety of applications such as power supply control, voltage regulation, voltage clamping and rectification. It is suitable for circuits with operating temperatures between -55°C and 125°C. Its low thermal resistance ensures that it can handle high power requirements without overheating. Its low power consumption makes it an energy-efficient component, thus suitable for portable devices. Additionally, the diode’s low voltage breakdown and high power ratings make it ideal for a variety of applications.

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