1N5379E3/TR13

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Diodes are nonsymmetrical semiconductor devices with two terminals, the anode and the cathode, and are available in many ratings and sizes. The 1N5379E3/TR13 is a single, low–power Zener diode which is specifically designed to operate in switching applications.

Application Field

The 1N5379E3/ TR13 is designed for use in voltage regulator circuits, such as AC–DC converters, DC-DC converters, UPS systems, and other power components. It is also used in general purpose applications like EMI filters, current limiting circuits, and over voltage protection applications. It has a forward breakdown voltage of 4.7V at 10 μA, a reverse current of 1.5mA at 4.7V, and a maximum power dissipation of 200mW. The diode has a maximum operating temperature of 125℃ and features an in-line evaluation element. The 1N5379E3/TR13 can also be used in signal and driver circuits, as well as in automotive systems, data storage systems and home applications.

Working Principle

A Zener diode acts as both a rectifier and an avalanche diode. In forward bias, electron–hole pairs in the PN junction region become increasingly hot, until they reach the zener voltage (VZ) and voltage breakdown occurs. The number of electrons and holes released depends on the PN junction area, and this results in a current, called the zener current. The internal element in the 1N5379E3/TR13 allows for direct testing of the breakdown voltage and Zener parameters.

In reverse bias, the Zener diode acts like an avalanche diode. When a voltage reverse bias is applied, the electrons multiply exponentially. This process results in the Zener current being limited until the Zener voltage is reached, at which point the current breaks through and the diode zeners. The application of a reverse bias can also result in exponential multiplication of electron and holes on the junction. As a result, the sudden increase in current can cause destruction of the PN junction or damage to other components in the circuit. This is why it is important to abide by the absolute maximum ratings for a Zener diode.

In summary, the 1N5379E3/ TR13 is a single, low–power Zener diode designed for voltage regulator circuits, general purpose applications like EMI filters, current limiting circuits, and over voltage protection applications. It pictures a forward breakdown voltage of 4.7V at 10 μA, a reverse current of 1.5mA at 4.7V, and a maximum power dissipation of 200mW. The diode can also be used in signal and driver circuits, as well as in automotive systems, data storage systems and home applications with a maximum operating temperature of 125℃. The in-line evaluation element allows for direct testing of the breakdown voltage and Zener parameters.

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