1N938B-1

Series:	--
Part Status:	Active
Voltage - Zener (Nom) (Vz):	8.55V
Tolerance:	--
Power - Max:	500mW
Impedance (Max) (Zzt):	20 Ohms
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	DO-204AH, DO-35, Axial
Supplier Device Package:	DO-35 (DO-204AH)

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Introduction

The 1N938B-1 is an electronic component classified under Diodes - Zener - Single. It is a Zener diode for protection applications due to its low standoff voltage, low zener impedance and good reverse power dissipation. This component is designed to have a small physical size and high power ratings, allowing it to be used in small or compact areas. It is a one-piece diode structure, with a reverse voltage rating of 250V, marking it suitable for applications that require low VCEO.

Applications

The 1N938B-1 is most commonly used as a Zener-diode protection element in a wide variety of systems, such as automotive, industrial, audio, medical, military and consumer electronics. Due to its low voltage rating, it can provide surge protection in low voltage automotive or consumer applications. Additionally, it can be used to provide overvoltage protection in military, medical and industrial applications. Its small size makes it suitable for use in very limited spaces, allowing it to be used in high density designs. The 1N938B-1 is suitable for use in various high voltage applications where quick and secure disconnection is necessary.

Working Principle

The primary working principle of the 1N938B-1 relies on the properties of a Zener diode. When the device is reverse-biased, the amount of reverse current flowing through the diode increases with an increase in the applied voltage, until it reaches what is known as the zener breakdown voltage. At this point, the diode enters conduction and the voltage across it remains approximately equal to the zener breakdown voltage. This process can be repeated over and over, allowing for a current to be passed through the device without the voltage ever surpassing the breakdown voltage. The 1N938B-1 utilises this principle to provide protection against overvoltage. When an incoming voltage starts to exceed the zener breakdown voltage, the diode becomes forward-biased, allowing the current from the incoming voltage to be conducted through it in the opposite direction. This reverses the polarity of the voltage, preventing it from exceeding the breakdown voltage. This process is known as reverse-biased protection and is the primary function of the 1N938B-1.

Conclusion

The 1N938B-1 is a low voltage, single-piece Zener diode designed for protection applications. It is most commonly used in high voltage applications where quick and secure disconnection is necessary. The Zener effect is used to ensure that the voltage is kept within the breakdown voltage, allowing for a current to be passed through the device without the voltage ever surpassing the breakdown voltage, thereby providing protection against overvoltage.

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