Allicdata Part #: | 1PGSMC5360HR7G-ND |
Manufacturer Part#: |
1PGSMC5360HR7G |
Price: | $ 0.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 25V 5W DO214AB |
More Detail: | Zener Diode 25V 5W ±5% Surface Mount DO-214AB (SMC... |
DataSheet: | 1PGSMC5360HR7G Datasheet/PDF |
Quantity: | 1000 |
1700 +: | $ 0.21380 |
Specifications
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 4 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 19V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
<!DOCTYPE html> <html> <body> <h2>1PGSMC5360HR7G Application Field and Working Principle</h2> <p>The 1PGSMC5360HR7G Zener Diode is a single, series manufactured for general purpose use and available in a wide range of voltage and current ratings. It is a silicon planar passivated diode with increased stability and reliability, making it suitable for conditions such as extreme temperature and voltage operation.</p> <h3>Application Field</h3> <p>The 1PGSMC5360HR7G Zener diodes are typically used in voltage regulation in a low voltage circuit. Since the Zener diodes are easily biased, they can be used to regulate small changes in currents through the diode while at the same time providing protection from over-voltage conditions. They can also be used as voltage references in HVAC, automotive and telecom circuits.</p> <h3>Working Principle</h3> <p>A Zener diode operates on the Zenor breakdown principle. When a high voltage or current is applied across a diode in forward bias, it is able to conduct electrons from the p-type material to the n-type material. The conducting carriers are of minority carrier type and are generated by a large electric field inside the depletion region. The electric field increases with increasing voltage and eventually exceed the critical electric field value for the silicon material. As a result, the Zener breakdown occurs, allowing the flow of current across the two p-n juntions in the reverse direction. As the external voltage rises, the voltage across the diode increases, and thus it acts as a voltage reference to maintain the output voltage of a system.</p> </body> </html>
The specific data is subject to PDF, and the above content is for reference
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