1SS397TE85LF Discrete Semiconductor Products

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The 1SS397TE85LF is a single-terminal positive clamp schottky rectifier from Toshiba that has been designed for use in Electronic Devices. It is a low power device, with a Forward Voltage Drop as low as 0.4A and a maximum Reverse Leakage current of 30 uA. The device can be used in applications such as voltage clamping, OR and AND gates, and general low current protection circuits.

The 1SS397TE85LF is composed of a P-type semiconductor substrate and an N-type substrate. An N+ layer is then placed on the P substrate, and an N-layer is placed on the N+ layer. This structure forms what is commonly known as a Schottky barrier, which resembles a tunnel structure. This provides the device with an extremely low forward voltage drop.

The working principle of the 1SS397TE85LF is such that when the device is forward biased, current flows through the device in the form of majority carriers, holes and electrons. The majority carriers are accelerated by the electric field and travel toward the opposite terminals, thus allowing the forward current to flow. On the other hand, when the device is reverse biased, the Schottky barrier prevents current flow and reverse leakage current is minimized.

The device is primarily used for clamping, in order to limit the voltage applied to sensitive components and circuits. It can also be used for OR and AND gates and for general low current protection circuits. The device is available in a variety of packages, including a power Super TO-220 package, a leadless package, and a mini-distribution SMD package.

As a single-terminal positive clamp schottky rectifier, the 1SS397TE85LF provides a convenient device for electronic circuits to reduce the risk of damage due to excessive voltage. With its low forward voltage drop and reverse leakage current, it is ideal for use in many applications, such as voltage clamping, OR and AND gates, and general low current protection circuits.

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